Results 141 to 150 of about 15,669 (219)

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Mg-Doped P-Type AlN Thin Film Prepared by Magnetron Sputtering Using Mg-Al Alloy Targets. [PDF]

Micromachines (Basel)
Ma Y, Wang X, Ma K.
europepmc   +1 more source

Ultrathin, Fully Solution‐Processed P(VDF‐TrFE) Piezoelectric Sensor Matrix for Electronic Skin

Advanced Electronic Materials, EarlyView.
An ultrathin, fully solution‐processed 4×$\times$4 piezoelectric sensor array is developed for skinconformal electronicskin applications. The device integrates inkjetprinted polymer electrodes with a 226 nm P(VDFTrFE) active layer on a 4.53 μm$\umu{\rm m}$ Parylene C substrate, enabling extreme flexibility and robust tactile sensing. The array exhibits
Ninja Kajas, Karem Lozano Montero, Leena Ukkonen, Veikko Surakka, Matti Mäntysalo   +4 more
wiley   +1 more source

Direct Formation of the Atomic Pd-ZnO Interface by Magnetron Sputtering Primed for Methanol Production from CO₂. [PDF]

ACS Catal
Smith LR, Kohlrausch EC, Aggett KJ, Chen Y, Gow IE, Weilhard A, Norman LT, Theis W, Morgan DJ, Bailey L, Khlobystov AN, Alves Fernandes J, Hutchings GJ.   +12 more
europepmc   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Effect of Hafnium-Based Thin Film Thickness on Microstructure and Electrical of Yttrium-Doped Hafnium Oxide Ferroelectric Devices Prepared by Magnetron Sputtering. [PDF]

Micromachines (Basel)
Ma B, Ma K, Qin X, Xi Y, Zhang J, Yang X, Yang P, Liu W.   +7 more
europepmc   +1 more source

Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition

Advanced Electronic Materials, EarlyView.
Pulse‐protocol optimization in an Au/MoO3/TiO2/FTO bilayer memristor enables linear analog synaptic conductance modulation along with digital resistive switching for memory. Controlled filament evolution produces stable learning‐forgetting characteristics with low nonlinearity, resulting in significantly enhanced neural network inference accuracy for ...
Girish Chandrashekar, Atul Thakre, R. Thamankar   +2 more
wiley   +1 more source

Water Vapor-Impermeable AlON/HfO_x Bilayer Films Deposited by Hybrid High-Power Impulse Magnetron Sputtering/Radio-Frequency Magnetron Sputtering Processes. [PDF]

Materials (Basel)
Chang LC, Lin SE.
europepmc   +1 more source

Abrupt and Gradual Resistive Switching in Interface‐Modified IGZO Memristors

Advanced Electronic Materials, EarlyView.
The indium gallium zinc oxide (IGZO) surface is modified with Ar‐plasma and ultraviolet ozone (UV‐O3) treatment. The W/IGZO/Pt memristors with Ar‐plasma treatment show forming‐free abrupt switching, whereas the UV‐O3‐treated device exhibits gradual switching, while both operate at voltages ≤1 V.
Krishna Rudrapal, Christian Spieth, Michael Oehme, Kathrin Küster, Ulrich Starke, Alwin Daus   +5 more
wiley   +1 more source

The Influence of the Ar/N₂ Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]

Materials (Basel)
Jeżak P, Seweryn A, Klepka M, Mroczyński R.   +3 more
europepmc   +1 more source