Results 151 to 160 of about 17,256 (262)

Gel Electrolytes for Flexible Zinc‐Air Batteries: Design, Challenges, and Perspectives

open access: yesAdvanced Science, EarlyView.
This review summarizes design strategies for gel electrolytes in flexible zinc‐air batteries, focusing on dendrite suppression, interfacial stability, and ultrathin architectures to enhance cycle life and energy density. ABSTRACT Flexible zinc‐air batteries (FZABs) have emerged as promising candidates for next‐generation flexible electronics and large ...
Yapeng Cao   +5 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

open access: yesAdvanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj   +8 more
wiley   +1 more source

Advancing Fruit Bioimpedance Monitoring With Sustainable, Soft, And Bio‐Based Electrodes Beyond ECG

open access: yesAdvanced Electronic Materials, EarlyView.
Electrical impedance spectroscopy enables non‐destructive fruit quality monitoring, but conventional ECG and needle electrodes compromise signal stability, fruit physiology, and sustainability. This perspective highlights the transition toward soft, biocompatible, and biodegradable electrode interfaces based on natural substrates, bio‐derived ...
Sundus Riaz   +6 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout   +19 more
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

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