Results 241 to 250 of about 197,808 (272)

Monolithic Integration of GaN Thin Film and GaN Nanorods Pixels: Facile Growth of InGaN/GaN Quantum Wells for the Realization of Full Color Micro‐LED Display

open access: yesAdvanced Optical Materials, EarlyView.
This work implements an advanced lithographic technique to fabricate a template to exploit the indium incorporation efficiency of crystallographic orientations of GaN and demonstrates green and blue self‐emissive µLED pixels through an integration of MOCVD growth technique, device fabrication and phosphor conversion for the realization of full‐color ...
Mandar A. Kulkarni   +13 more
wiley   +1 more source

Understanding the Temperature Conditions for Controlled Splicing Between Silica and Fluoride Fibers

open access: yesAdvanced Photonics Research, EarlyView.
Thermal splicing conditions are investigated between silica and ZrF4 fibers, focusing on mechanical strength. A fiber Bragg grating characterises the thermal profile in the filament splicer's hot zone. Results indicate a narrow temperature window for strong joints.
Antreas Theodosiou   +7 more
wiley   +1 more source

Witnessing the onset of reionization through Lyman-α emission at redshift 13. [PDF]

open access: yesNature
Witstok J   +36 more
europepmc   +1 more source

Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties

open access: yesAdvanced Photonics Research, EarlyView.
The present approach proposes a high yield production method, using an inexpensive equipment, for the fabrication of lanthanide‐doped ternary fluoride films having high crystallinity and a very homogeneous surface. This efficient sol–gel/spin‐coating approach produces, selectively and reproducibly, the hexagonal undoped and Eu‐doped NaGdF4 films.
Anna Lucia Pellegrino   +4 more
wiley   +1 more source

High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy

open access: yesAdvanced Photonics Research, EarlyView.
This work introduces a complementary metal‐oxide‐semiconductor (CMOS)‐compatible, high‐detectivity mid‐infrared GeSn photodetector monolithically integrated on a silicon platform. Enabled by an innovative composition‐gradient GeSn buffer, the high‐quality, thick GeSn active layer delivers exceptional responsivity and detectivity across the mid‐infrared
Meng‐Hsien Chou   +6 more
wiley   +1 more source

Repository for extended dark matter object constraints. [PDF]

open access: yesEur Phys J C Part Fields
Croon D, Sevillano Muñoz S.
europepmc   +1 more source

Diffractive Synthesis of Multipole Interference States Using Low‐Index Mesoscale Dielectric Structures

open access: yesAdvanced Photonics Research, EarlyView.
Multipole interference (MPI) plays pivotal roles in electromagnetics. In optics, it has been realized typically with the Mie resonance in high‐index, deep‐subwavelength‐scale dielectric resonators. A new, diffraction‐based MPI scheme is proposed and demonstrated with low‐index, mesoscale dielectric structures.
Rabiul Islam Sikder   +2 more
wiley   +1 more source

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