Results 261 to 270 of about 1,371,228 (355)

Neuromorphic Visual Receptive Field Hardware with Vertically Integrated Indium‐Gallium‐Zinc‐Oxide Optoelectronic Memristors over Silicon Neuron Transistors

open access: yesAdvanced Materials, EarlyView.
This work proposes neuromorphic visual receptive field hardware with vertically integrated amorphous In‐Ga‐Zn‐O optoelectronic memristors and Si neuron transistors for retina‐inspired visual processing. The visual receptive field array, comprising ON‐ and OFF‐type cells, facilitates edge detection, thereby enhancing perception in complex images, such ...
Hyun Wook Kim   +7 more
wiley   +1 more source

Practical discrete mathematics and mathematics of logic (practical occupations 12–16)

open access: yesEducational resources and technology, 2016
S. F. Tyurin, Y. A. Alyaev
openaire   +1 more source

Circularly Polarized Polariton Lasing from Spin‐Momentum Locking in Deformed Plasmonic Kagome Cavities

open access: yesAdvanced Materials, EarlyView.
This paper describes room‐temperature polariton lasing with high circular polarization from deformed plasmonic Kagome lattice cavities strongly coupled to colloidal CdSe nanoplatelets. Spin‐selectivity from cavity modes resulted in control over the handedness of circular polarization as well as the direction of polariton lasing, opening prospects for ...
Zhaoyun Zheng   +6 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Devices and Applications

open access: yesAdvanced Materials, EarlyView.
Organic electrochemical transistors are emerging as promising platforms for neuromorphic devices that emulate neuronal and synaptic activities and can seamlessly integrate with biological systems. This review focuses on resultant organic artificial neurons, synapses, and integrated devices, with an emphasis on their ability to perform neuromorphic ...
Kexin Xiang   +4 more
wiley   +1 more source

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

open access: yesAdvanced Materials, EarlyView.
A new monolayer insulator, InO2, is synthesized by intercalating indium beneath patterned epitaxial graphene on SiC, followed by high‐temperature oxidation. This selective confinement yields large‐area, uniform InO2 with a wide bandgap of 4.1 eV. Upon intercalation, the EG/n‐SiC junction transitions from ohmic to Schottky, exhibiting a rectification ...
Furkan Turker   +18 more
wiley   +1 more source

Home - About - Disclaimer - Privacy