Results 191 to 200 of about 493,391 (248)

Stacking Fault Complexions in AgSbTe2 Thermoelectrics With Enhanced Electrical Conductivity

open access: yesAdvanced Functional Materials, EarlyView.
Atomic‐scale characterization resolves stacking fault complexion in AgSbTe2, showing Te and Sb segregation along with lattice dilation. Their enhanced effects on phonon scattering are modeled analytically. Although most defects also impede electron transport, local four‐point‐probe measurements reveal higher electrical conductivity at stacking fault ...
Lamya Abdellaoui   +13 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

open access: yesAdvanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher   +17 more
wiley   +1 more source

Large-scale bathymetry in high-turbidity rivers enabled by remote sensing and artificial intelligence. [PDF]

open access: yesEnviron Sci Ecotechnol
Pang Y   +7 more
europepmc   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim   +9 more
wiley   +1 more source

Heart Rate Estimation Using the Galaxy Watch During Maximal Cardiopulmonary Exercise Testing: Cross-Sectional Validation Study. [PDF]

open access: yesJMIR Cardio
Inoue A   +6 more
europepmc   +1 more source

Impact of Disorder on Microscopic Superconducting and Normal‐State Responses in a Kagome Metal

open access: yesAdvanced Functional Materials, EarlyView.
Using depth‐resolved, field‐ and pressure‐dependent μSR$\umu{\rm SR}$ measurements, we show that disorder in Ta‐doped KV3Sb5 drives a crossover from nodal to nodeless superconductivity while strongly modifying the normal‐state magnetic response. Our results reveal that disorder affects superconductivity and magnetism in fundamentally different ways ...
J. N. Graham   +18 more
wiley   +1 more source

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