Results 51 to 60 of about 329 (145)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Simulation and experimental implementations of memcapacitor based multi-stable chaotic oscillator and its dynamical analysis

open access: yes, 2021
In this work, linear quadratic regulator (LQR) method is proposed for controlling and synchronizing memcapacitor based chaotic system (MMCO). The MMCO is constructed with a charge controller memcapacitor, a resistor, a conductance and two capacitors. The

core   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, Volume 36, Issue 37, 7 May 2026.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

Rewiring Droplet Interface Synapses

open access: yesAdvanced Intelligent Systems, Volume 8, Issue 4, April 2026.
Droplet interface synapses are used to create a neuromorphic network. Voltage pulses draw the droplets into contact and enable rewiring of the network through electrowetting. Results show that the heterogeneous droplet compositions and pore‐forming molecules may be used to tune the neuromorphic properties of the device using trapped charge as a form of
Sarita Shrestha, Eric Freeman
wiley   +1 more source

Electronically Charge-Controlled Tunable Meminductor Emulator Circuit With OTAs and Its Applications

open access: yesIEEE Access, 2023
Studies on new passive elements with memory properties such as memristor, meminductor, and memcapacitor have increased recently. In this article, an operational transconductance amplifier (OTA) based meminductor simulator circuit without using a ...
Durmus Ersoy, Firat Kacar
doaj   +1 more source

Intermediate Resistance and Capacitance States in Ge‐Rich GeSbTe Phase‐Change Memory

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 4, April 2026.
Intermediate states of Ge‐rich GeSbTe phase‐change (PCM) memory cells are investigated by electrical impedance spectroscopy. Resistance and capacitance are extracted using an equivalent RC model, revealing tunable resistance and SET‐state‐dominated capacitance.
Adrien Delpoux   +7 more
wiley   +1 more source

Extreme multistability and state transition on a physical memristor–memcapacitor-based chaotic circuit

open access: yes, 2022
In this paper, a fifth-order chaotic circuit with extreme multistability is designed based on the physical memristor and memcapacitor (equivalent circuit based on physical memristor).
Kaixuan Zhao   +4 more
core   +1 more source

Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications

open access: yesInformation &Functional Materials, Volume 3, Issue 1, Page 8-34, March 2026.
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo   +3 more
wiley   +1 more source

Utilization of Euler-Lagrange Equations in Circuits with Memory Elements [PDF]

open access: yesRadioengineering, 2016
It is well known that the equation of motion of a system can be set up using the Lagrangian and the dissipation function, which describe the conservative and dissipative parts of the system.
Z. Biolek, D. Biolek, V. Biolkova
doaj  

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