Results 61 to 70 of about 434 (175)

Intermediate Resistance and Capacitance States in Ge‐Rich GeSbTe Phase‐Change Memory

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 4, April 2026.
Intermediate states of Ge‐rich GeSbTe phase‐change (PCM) memory cells are investigated by electrical impedance spectroscopy. Resistance and capacitance are extracted using an equivalent RC model, revealing tunable resistance and SET‐state‐dominated capacitance.
Adrien Delpoux, Sijia Ran, Laura Pecourt, Roberto Simola, Daniel Benoit, Simon Jeannot, Alain Claverie, Jérémie Grisolia   +7 more
wiley   +1 more source

Cryogenic NDRO in Conventional Non-Interface-Engineered HZO-Based MFM Capacitors

IEEE Journal of the Electron Devices Society
Cryogenic non-volatile memory technologies are crucial for realizing energy-efficient and scalable quantum computing systems. Ferroelectric capacitors (FeCAPs) are promising candidates; however, conventional readout relies on polarization switching ...
Mamidala Karthik Karthik Ram, Andre Andersen, Lars-Erik Wernersson   +2 more
doaj   +1 more source

Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications

Information &Functional Materials, Volume 3, Issue 1, Page 8-34, March 2026.
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo, Zheng Wang, Jialin Meng, Tianyu Wang   +3 more
wiley   +1 more source

Designing Memristive Materials for Artificial Dynamic Intelligence

Advanced Intelligent Discovery, Volume 2, Issue 1, February 2026.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source

Utilization of Euler-Lagrange Equations in Circuits with Memory Elements [PDF]

Radioengineering, 2016
It is well known that the equation of motion of a system can be set up using the Lagrangian and the dissipation function, which describe the conservative and dissipative parts of the system.
Z. Biolek, D. Biolek, V. Biolkova
doaj  

Experimental Demonstration of Capacitive in‐Memory Computing Using Ferroelectric HZO Memcapacitors

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
This work experimentally demonstrates capacitive in‐memory computing (IMC) using ferroelectric HZO capacitors with non‐destructive readout. Device‐level studies confirm robust endurance and retention, while cross‐point arrays (4 × 2 and 16 × 6) achieve 100% accuracy in pattern‐recognition tasks.
Minjong Lee, Heber Hernandez‐Arriaga, Dushyant M. Narayan, Soham Shirodkar, Yong Chan Jung, Dan N. Le, Seongbin Park, Jongmug Kang, Seungbin Lee, Hyeonhong Min, Gwanghyeon Jang, Si Joon Kim, Jiyoung Kim   +12 more
wiley   +1 more source

Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation (Adv. Electron. Mater. 20/2025)

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
Ferroelectric Memcapacitors In their Research Article (10.1002/aelm.202500421), Woo Young Choi and co‐workers propose and demonstrate a novel capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor (1C) exhibiting band‐reject‐filter‐shaped capacitance‐voltage characteristics.
Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi   +5 more
wiley   +1 more source

Simulation and experimental implementations of memcapacitor based multi-stable chaotic oscillator and its dynamical analysis

, 2021
In this work, linear quadratic regulator (LQR) method is proposed for controlling and synchronizing memcapacitor based chaotic system (MMCO). The MMCO is constructed with a charge controller memcapacitor, a resistor, a conductance and two capacitors. The

core   +1 more source

Memory circuit elements for hardware security: a review from memristors to memcapacitors and meminductors

Frontiers in Electronics
The security of modern electronic systems is increasingly grounded in the physical properties of hardware, rather than on purely algorithmic assumptions.
Francisco J. Romero, Shayma Habboush, Seyedehsomayeh Hatefinasab, Cristina Fernandez, Akiko Ohata, Encarnación Castillo, Diego P. Morales, Noel Rodriguez   +7 more
doaj   +1 more source

Memimpedance‐Based Biomolecular Device for Adaptive Physical Reservoir Computing

Advanced Intelligent Systems, Volume 7, Issue 11, November 2025.
By integrating fast‐switching ion‐channel‐based memristive and slow‐switching biomembrane‐based memcapacitive nodes within droplet interface bilayers, this hybrid memimpedance reservoir overcomes the memory‐nonlinearity trade‐off and extends temporal adaptability.
Ahmed S. Mohamed, Nicholas X. Armendarez, Md Sakib Hasan, Joseph S. Najem   +3 more
wiley   +1 more source