Results 61 to 70 of about 3,154,535 (299)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Tourism as Memory-Making

Until recently the Russian Federation used to be one of the largest markets for outbound travel. Among Russians’ favourite destinations were cities that used to be part of the Russian Empire and the Soviet Union, and are now located in the independent ...
Pfoser, Alena
core   +1 more source

Self-rated everyday prospective memory abilities of cigarette smokers and non-smokers: a web based study [PDF]

, 2005
The present study examined self-ratings of two aspects of everyday memory performance: long-term prospective memory—measured by the prospective memory questionnaire (PMQ), and everyday memory—measured by the everyday memory questionnaire (EMQ).
Buchanan, Tom, Scholey, Andrew, Parrott, A.C., Ling, J., Heffernan, Tom, Heffernan, T.M., Parrott, Andrew, Scholey, A.B., Rodgers, J., Ling, Jonathan, Rodgers, Jacqui, Buchanan, T.   +11 more
core   +1 more source

Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films

Nanomaterials
The traditional von Neumann architecture of computers, constrained by the inherent separation of processing and memory units, faces challenges, for instance, memory wall issue.
Sibo Wang, Xiuhuan Liu, Han Yu, Xiaohang Liu, Jihong Zhao, Lixin Hou, Yanjun Gao, Zhanguo Chen   +7 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society
Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel ...
Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim   +5 more
doaj   +1 more source

From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport

Advanced Electronic Materials, 2020
Write‐once‐read‐many (WORM) memory behavior is often observed in polymer electret memory (PEM) devices, greatly limiting their overall performance. This paper systematically investigates the device physics of PEM devices with poly(α‐methylstyrene) as a ...
Waner He, Wenchao Xu, Huixin He, Xiaosai Jing, Chuan Liu, Jiajun Feng, Chunlai Luo, Zhen Fan, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu, Junming Liu   +12 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Memory, citizenship and social behaviour : Can we (really) learn from the past?

, 2015
Sarah Gensburger et Sandrine Lefranc (CNRS – ISP – Université Paris Ouest – ENS Cachan) In this research we seek to challenge the widespread belief that remembering our past is necessary for preserving peace and democracy and that we can “learn” from the
Women Memory
core  

Analytical and numerical modeling of electric field in a coplanar devices with neural predictor

Cogent Engineering
The objective of this work is to design, and test a programmable memory device based on an interdigital coplanar electrode structure with two electrodes, which can function as a compact programmable resistor with other artificial neural network hardware.
Mahmoud Z. Iskandarani
doaj   +1 more source