Results 221 to 230 of about 11,896,249 (305)

Covalent Adaptable Network of Semicrystalline Polyolefin Blend with Triple-Shape Memory Effect. [PDF]

Polymers (Basel)
Lee H, Jang Y, Chang YW, Lim C.
europepmc   +1 more source

Rotary 3D Printing With Integrated Electroplating

Advanced Engineering Materials, EarlyView.
A rotary material extrusion platform integrates localized copper electroplating with printing and encapsulation to fabricate cylindrical polymer–metal structures containing fully embedded, low‐resistance conductive pathways that enable internal Joule heating and thermally activated shape‐memory responses.
Antonio Zagaria, Nicola Larovere, Moslem Mohammadi, Gianluca Percoco, Ali Zolfagharian, Gianni Stano   +5 more
wiley   +1 more source

Memory Effect of Double Oxides Compared to Simple Ion Exchange for Controlled Fluoride Ion Capture and Release. [PDF]

Materials (Basel)
Alazreg A, Tadić V, Egelja A, Savić A, Šaponjić A, Vuksanović MM, Heinemann RJ.   +6 more
europepmc   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

On improving public health after COVID-19 epidemic: A fractal-fractional mathematical solutions with short memory effect and efficient optimal strategies. [PDF]

PLoS One
Dhar B, Sajid M.
europepmc   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Innovative Insights into Fatigue Damage Evolution of Shield Tunnel Segments by Introducing Stable Damage Limit and Memory Effect. [PDF]

Materials (Basel)
Zou Y, Ye Y, Tang Q.
europepmc   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

Influence of Infill Patterns on the Shape Memory Effect of Cold-Programmed Additively Manufactured PLA. [PDF]

Polymers (Basel)
Barrera-Quintero V, Correa-Gómez E, Caballero-Ruiz A, Ruiz-Huerta L.   +3 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source