Results 111 to 120 of about 19,562 (279)

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source

Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing

Nano Materials Science
Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence. The memristor is an ideal artificial synaptic device with fast operation and good tolerance.
Fang Luo, Wen-Min Zhong, Xin-Gui Tang, Jia-Ying Chen, Yan-Ping Jiang, Qiu-Xiang Liu   +5 more
doaj   +1 more source

Low Power Optoelectronic Neuromorphic Memristor for In‐Sensor Computing and Multilevel Hardware Security Communications

Advanced Science, EarlyView.
ABSTRACT Conventional software‐based encryption faces mounting limitations in power efficiency and security, inspiring the development of emerging neuromorphic computing hardware encryption. This study presents a hardware‐level multi‐dimensional encryption paradigm utilizing optoelectronic neuromorphic devices with low energy consumption of 3.3 fJ ...
Bo Sun, Jinhao Zhang, Jialin Meng, Tianyu Wang   +3 more
wiley   +1 more source

Physical Implementation of Optical Material‐Based Neural Networks Processing Enabled by Long‐Persistent Luminescence

Advanced Science, EarlyView.
This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

Advanced Science, EarlyView.
Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

memristor

Citation: 'memristor' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08840 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

Advanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy   +3 more
wiley   +1 more source