Results 151 to 160 of about 14,306 (300)

Memristor Based Sallen-Key Filters

, 2015
In 1971, memristor is claimed as a missing circuit element and almost 40 years later than its prediction a memristive system behaving as a memristor has been found in 2008.
Mutlu, Reşat, Kuntman, Hulusi Hakan, Yener, Şuayb Çağrı   +2 more
core  

Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors

Advanced Science, EarlyView.
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer, Juan P. Martinez, Yuxuan He, Giulio Galderisi, Katrin Pingen, Eduardo Sergio Oliveros‐Mata, Lisa Tellis, Cigdem Cakirlar, Christoph Beyer, Brojogopal Sapui, Joachim Knoch, Klaus Hofmann, Sandro Carrara, Eugenio Cantatore, Max C. Lemme, Ian O'Connor, Akash Kumar, Andre Heinzig, Thomas Mikolajick, Walter M. Weber   +19 more
wiley   +1 more source

ANALYSIS OF FILTER CHARACTERISTICS BASED ON PWL MEMRISTOR

Electrica, 2019
Memristor is claimed as a passive two terminal fundamental circuit element in 1971 and declared to be physically fabricated in 2008. The memristor can provide new features in analog circuit design thanks to its properties which cannot be mimicked by a ...
Şuayb Çağrı YENER, Reşat MUTLU, Hulusi Hakan KUNTMAN   +2 more
doaj   +2 more sources

Lattice Disorder in CuI Enables Filament‐Free Transparent Memristors

Advanced Science, EarlyView.
Transparent Cu1‐xAgxI thin‐film memristors rely on internal ion transport to produce reversible resistive‐switching effects. Direct elemental characterizations observe obvious Cu and Ag redistribution driven by applied bias, proving mobile ions drive the device's resistive‐switching responses.
Yuzhao Ouyang, Ke Qu, Haonan Wang, Jianquan Liu, Wei Li, Zhuoran Ji, Jialin Yang, Qiuxiang Zhu, Zhenzhong Yang, Xiaodong Tang, Hui Peng, Bobo Tian, Chungang Duan, Chang Yang   +13 more
wiley   +1 more source

Temporally Correlated Stochastic Spiking Neural Networks Enabled by 2D Ferroelectric Synapse‐Neuron Integration

Advanced Science, EarlyView.
We demonstrate a stochastic spiking neural network by integrating an α‐ln2Se3/h‐BN/CIPS FeFET synapse with an Au/CIPS/Au neuron. Unlike conventional memoryless stochastic neurons, the proposed neuron generates stochastic spikes through the evolution of internal ferroelectric polarization states, giving rise to intrinsic temporal correlations and ...
Hanseo Jeon, Ui Do Ji, Sangmin Lee, Gihyeon Bhin, Chang Yong Park, Ji‐Sang Park, Byungchul Jang, Sungjoo Lee   +7 more
wiley   +1 more source

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

Advanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu, Yunlong Sun, Hao Luo, Duoduo Zhao, Yuhan Zeng, Xuzihan Zhang, Zhewei Liu, Hao Peng, Zhijing Zhang, Jack Yang, Ji Zhang, Danyang Wang, Junjie Shi, Sean Li   +13 more
wiley   +1 more source

Multifunctional Vertical Bulk‐Heterojunction Transistors With Amorphous GaOx for Neuromorphic Perception‐to‐Decision

Advanced Science, EarlyView.
A multifunctional vertical bulk‐heterojunction transistor (MVBT) with amorphous GaOx integrates four functionalities within a single neuromorphic device. Gate‐source operation enables 254 nm deep‐ultraviolet sensing and threshold neuronal firing, whereas three‐terminal operation supports broadband UV–vis‐NIR synaptic functions and bias‐controlled ...
Jinkui Si, Qiong Zhuang, Rengjian Yu, Junling Zhou, Lan Yang, Changjie Zhou, Huili Zhu, Minshuai Wang, Xiaomei Cai, Qiubao Lin, Wangying Xu, Shuqiong Lan, Huipeng Chen   +12 more
wiley   +1 more source

Highly Linear Perovskite Synapses for Neuromorphic Computing

Advanced Science, EarlyView.
Voltage spikes applied to an Au/ACI‐phase perovskite/ITO memristor emulate the ionic signaling of a biological synapse, generating a tunable postsynaptic current. The vertically aligned perovskite film confines iodide‐vacancy migration, enabling highly linear, and symmetric conductance updates with 100 states and 5.5 aJ per event. Such synapses sustain
Zhongwen Sun, Boyu Wan, Zifan Zhang, Zhikai Wang, Xuan Zhao, Haonan Si, Qingliang Liao, Yue Zhang   +7 more
wiley   +1 more source

Design CMOS Memristor-Based Logic Gates

, 2019
As CMOS technology is continually being scaled down to its physical boundaries, it is facing difficulties such as improving saturated efficiency, increasing leakage power, and increasing power consumption.
Nur Aini Binti Samsudin
core  

Memristor based SRAM

, 2020
AN ABSTRACT OF THE THESIS OFAPARNA REDDY KOTTE, for the Master of science degree in Electrical and Computer Engineering, presented on November 5,2020, at Southern Illinois University Carbondale. TITLE: MEMRISTOR BASED SRAM MAJOR PROFESSOR: Dr. Haniotokis
Kotte, Aparna Reddy
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