Results 161 to 170 of about 14,306 (300)
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
Research on Memristors in Hardware Security. [PDF]
Zhong Z +7 more
europepmc +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Analysis and Applications of Neuromorphic Memristors in Artificial Intelligence Computing. [PDF]
Wang J, Chen Q, Zhang J, Meng J, Wang T.
europepmc +1 more source
A New Window Function for Memristor Modeling
Memristor was proposed by Chua in 1971 as a fourth circuit element in addition to the resistor, capacitor and inductor. In 2008, a group of engineers from HP laboratories announced that they were producing a memristor as a physical device.
GÜL, Fatih +2 more
core
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa +6 more
wiley +1 more source

