Results 191 to 200 of about 14,306 (300)

Spectrally Partitioned All-Optical Memristors for Highly Linear Neuromorphic Vision Systems. [PDF]

Nanomicro Lett
Zhang J, Sun B, Wang S, Zhou G, Sun L, Cao Z, Gao K, Li X, Chen X, Shao J.   +9 more
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

Advanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli   +5 more
wiley   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

Advanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee, Dong Hyeop Shin, Seung Joo Myoung, Soohong Eo, Wonjung Kim, Seeun Lee, Changwook Kim, Junjong Lee, Yoon Jung Lee, Sung‐Jin Choi, Sungjun Kim, Dae Hwan Kim   +11 more
wiley   +1 more source

CMOS-Compatible AlScN Memristor on Silicon Exhibiting Short-Term Memory for Reservoir Computing. [PDF]

Biomimetics (Basel)
Park W, Chae H, Rasheed M, Kim S.
europepmc   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

Advanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti, Yichun Xu, Ludovica Asselta, J. Joshua Yang, R. Stanley Williams, Fernando Corinto   +5 more
wiley   +1 more source

Realization of the Bienenstock-Cooper-Munro rule in a single memristor. [PDF]

Nat Commun
Huang J, Huang A, Yang Q, Li P, Gao Q, Wang M, Xiao Z, Zhang X, Gao J, Geng X, Liu L, Du Y, Lu R, Chu PK, Di Z.   +14 more
europepmc   +1 more source

MoS2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing

Advanced Electronic Materials, EarlyView.
A cleanroom‐free, fully additive fabrication route combines ultraprecise printed silver electrodes with Langmuir–Schaefer‐deposited bilayer MoS2 to realize ultralow‐power resistive switching devices. The resulting microscale memories exhibit low operating voltages, a large memory window, stable retention and endurance, demonstrating a scalable and cost‐
Miguel Franco, Daniel Neves, Dorina T. Papanastasiou, Jonas Deuermeier, Tomás Calmeiro, Tomás Mingates, Adam Kelly, Joseph Neilson, Eugénie Martinez, Zdeněk Sofer, Elvira Fortunato, Rodrigo Martins, Emanuel Carlos, Asal Kiazadeh   +13 more
wiley   +1 more source

Photosensing PUF from an Intrinsically Random SnTe Memristor for Image Encryption and Recognition. [PDF]

Nanomaterials (Basel)
Xu W, Zhang J, Xie J, Xu T, Wu J, Wang H.   +5 more
europepmc   +1 more source

Reliable Ru‐Based CBRAM Synapses for Energy‐Efficient Neuromorphic Computing: Suppressing Filament Overgrowth and Read Noise via Ru‐Pt Alloy and AlOx Engineering

Advanced Electronic Materials, EarlyView.
Ru–Pt alloying suppresses filament overgrowth and an AlOx switching layer enhances reliable switching, hopping transport enables conductance tuning via hopping distance modulation, Ru7Pt3/AlOx/Pt device yields 16 low‐noise conductance states, a 2–3‐fold improvement over prior Ru‐based CBRAM, and CSNN inference on FMNIST reaches 81% accuracy with 103 ...
Sangmin Lee, Sungmin Yoo, Yeonjoo Jeong, Jaewook Kim, Hyun Jae Jang, Jongkil Park, Seongsik Park, Suyoun Lee, Byeong‐Kwon Ju, Jong Keuk Park, Inho Kim   +10 more
wiley   +1 more source