Results 241 to 250 of about 11,144 (308)

Temperature‐Modulated Threshold Response in a Volatile Memristor: Toward a Biomimetic Polymodal Nociceptive System

Advanced Functional Materials, Volume 36, Issue 45, 5 June 2026.
This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang, Yuseong Jang, Myoungsu Chae, Hee‐Dong Kim   +3 more
wiley   +1 more source

Multisensory Neuromorphic Devices: From Physics to Integration. [PDF]

Nanomicro Lett
Gui A, Mu H, Yang R, Zhang G, Lin S.
europepmc   +1 more source

Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity

Advanced Functional Materials, Volume 36, Issue 46, 8 June 2026.
This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su, Huacheng Zhang, Tamar L. Greaves, Qi Han, Weiwei Lei, Dan Liu   +5 more
wiley   +1 more source

Generalized FitzHugh-Nagumo equations with Caputo gH-differentiability: A novel fuzzy fractional approach to digital memristor networks. [PDF]

PLoS One
Yousuf M, Ahmad U, Muhammad G, Alsulami H.   +3 more
europepmc   +1 more source

Dual‐Inductive and Programmable Switching: A New Paradigm in Ionic Interface‐Controlled Perovskite Memory

Advanced Functional Materials, Volume 36, Issue 49, 18 June 2026.
A fully programmable, dual‐inductive switchable halide perovskite memristor is demonstrated through precise BDAI2‐mediated interface engineering. This ion‐modulating layer suppresses stochastic filamentary growth, enabling stable, non‐filamentary switching via dynamic barrier modulation.
So‐Yeon Kim, Juan Bisquert
wiley   +1 more source

Editorial: Novel memristor-based devices and circuits for neuromorphic and AI applications, volume II. [PDF]

Front Neurosci
Abunahla H, Al-Sarawi S.
europepmc   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, Volume 13, Issue 12, 23 June 2026.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Dual Bipolar Resistive Switching in Wafer-Scalable 2D Perovskite Oxide Nanosheets-Based Memristor. [PDF]

Adv Sci (Weinh)
Kim S, Yoon C, Yim H, Kim T, Suh H, Ryu W, Oh G, Jeon J, Oh K, Jeong Y, Choi JW, Park BH.   +11 more
europepmc   +1 more source

2D Copper MOF Membranes with Precise Pores for Ionic Memory

Advanced Science, Volume 13, Issue 31, 4 June 2026.
 . ABSTRACT Biological ion channels play a critical role in the complex physiological processes of living organisms. Inspired by these natural systems, we demonstrate the fabrication of ultrathin 2D copper‐based metal‐organic framework (CuMOF) films and their application to mimic key functionalities of biological membranes. Using a liquid–air interface
Hiran Jyothilal, Raj Kumar Gogoi, Yuchen Liu, Vikas Sharma, Solleti Goutham, Michael Hutton, Rachel C. Kilbride, Daniel T.W. Toolan, Ashok Keerthi, Boya Radha   +9 more
wiley   +1 more source

Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor. [PDF]

Adv Sci (Weinh)
Rashid MU, Safder U, Khan SA, Pham AT, Sheeraz M, Dang NH, Thanh DL, Tahir Z, Maqbool F, Chung KH, Cho S, Kim J, Kim YS.   +12 more
europepmc   +1 more source