Results 221 to 230 of about 32,825 (324)

Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor array

, 2018
Fatih Gül
openalex   +1 more source

Conjugated Polymers Engineered for Flexible/Stretchable Electronics

Journal of Polymer Science, EarlyView.
This review highlights glass transition temperature (Tg) as the central parameter linking molecular structure to device performance in conjugated polymers. By tuning backbone rigidity, side‐chain architecture, and dynamic bonding, Tg governs the balance between π–π stacking–enabled charge transport and mechanical compliance.
Yunchong Yang, Josh Bass, Weijia Yan, Ashwath Anand, Chunka Zhou, Jingjing Qiu   +5 more
wiley   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors. [PDF]

Adv Sci (Weinh)
Tan C, An M, Liu W, Wang H, Yang S, Li J, Li J, Luo Y, Wang C, Xu J, Chi Y, Yang Y.   +11 more
europepmc   +1 more source

Optically Tunable Electrical Oscillations in Oxide‐Based Memristors for Neuromorphic Computing [PDF]

Shimul Kanti Nath, Sujan Kumar Das, Sanjoy Kumar Nandi, Xi Chen, Camilo Verbel Marquez, Armando Rúa, Mutsunori Uenuma, Zhongrui Wang, Songqing Zhang, Ruijie Zhu, Jason K. Eshraghian, Xiao Sun, Teng Lü, Yue Bian, Nitu Syed, Wenwu Pan, Han Wang, Wen Lei, Lan Fu, L. Faraone, Yun Liu, R. G. Elliman   +21 more
openalex   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Atomic-scale quantification of individual oxygen vacancies and structural evolution in valence change memristors. [PDF]

Nat Commun
Wang Z, Lin W, Li Y, Wang M, Guo A, Luo H, Sang X, Jin L, Chen C, Zhao W, Liu H, Dunin-Borkowski RE, Wu J.   +12 more
europepmc   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

A memristor-based energy-efficient compressed sensing accelerator with hardware-software co-optimization for edge computing. [PDF]

Natl Sci Rev
Jiao Y, Zhao H, Tang J, Zhou Y, Hu R, Jiang H, Li X, Huang J, Sun B, Sun W, Gao B, Qian H, Wu H.   +12 more
europepmc   +1 more source

Effects of Oxygen Gradient Engineering on Resistive Switching Uniformity in A-Igzo Memristors for Synaptic Plasticity Emulation

Xin Fang, Xiaofeng Zhao, Chunpeng Ai, Zhipeng Yu, Haoyang Che, Dianzhong Wen   +5 more
openalex   +1 more source

Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation

Small, EarlyView.
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn, Do Kyeong Yun, Mi Hyang Park, Hong Woon Yun, Minh Chien Nguyen, Van Tu Vu, Huamin Li, Pallavi Aggarwal, Woo Jong Yu   +8 more
wiley   +1 more source