Results 31 to 40 of about 4,407 (266)

A Compact Memristor Model Based on Physics-Informed Neural Networks

Micromachines
Memristor devices have diverse physical models depending on their structure. In addition, the physical properties of memristors are described using complex differential equations.
Younghyun Lee, Kyeongmin Kim, Jonghwan Lee   +2 more
doaj   +1 more source

Coexisting Firing Patterns in an Improved Memristive Hindmarsh–Rose Neuron Model with Multi-Frequency Alternating Current Injection

Micromachines, 2023
With the development of memristor theory, the application of memristor in the field of the nervous system has achieved remarkable results and has bright development prospects.
Mengjiao Wang, Jie Ding, Bingqing Deng, Shaobo He, Herbert Ho-Ching Iu   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

The Ouroboros of Memristors: Neural Networks Facilitating Memristor Programming

Proceedings of the Neuronics Conference, 2023
arXiv (2024).
Yu, Zhenming, Yang, Ming-Jay, Finkbeiner, Jan, Siegel, Sebastian, Strachan, John Paul, Neftci, Emre   +5 more
openaire   +3 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Linearized Programming of Memristors for Artificial Neuro-Sensor Signal Processing

Sensors, 2016
A linearized programming method of memristor-based neural weights is proposed. Memristor is known as an ideal element to implement a neural synapse due to its embedded functions of analog memory and analog multiplication.
Changju Yang, Hyongsuk Kim
doaj   +1 more source

Special Memristor and Memristor-Based Compact Neuron Circuit

Journal of Circuits, Systems and Computers, 2023
Implementing neuron circuit using memristor can be more effective thanks to some properties of memristor such as nonlinearity. For this reason, many memristor-based neuron circuits have been found in the literature. This study presents a memristor-based floating neuron circuit that exhibits different types of spikes.
Altan, Muhammet Alper, Orman, Kamil, Babacan, Yunus, Yeşil, Abdullah, Yeşil, Abdullah   +4 more
openaire   +2 more sources

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

Advanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee, Byung Ik Park, Gihyeon Yim, Hyunjae Yoo, Sangjun Ma, Jundong Park, Jeong‐Yun Sun   +6 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source