Results 41 to 50 of about 14,306 (300)

Electrical Nonlinearity Emulation Technique for Current-Controlled Memristive Devices

open access: yesIEEE Access, 2017
Emerging memristor technology is recently drawing widespread attention due to its potential for diverse applications. Due to the lack of real solid-state memristive devices, there have been many initiatives to develop memristor emulators to study their ...
Abdullah G. Alharbi   +3 more
doaj   +1 more source

Implementation of Highly Stable Memristive Characteristics in an Organic–Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation

open access: yesMolecules, 2023
This study proposes a high-performance organic–inorganic hybrid memristor for the development of neuromorphic devices in the memristor-based artificial synapse.
Dong-Hee Lee, Hamin Park, Won-Ju Cho
doaj   +1 more source

A Flux-Controlled Logarithmic Memristor Model and Emulator

open access: yes, 2022
The HP TiO2 model, as it is well known, is the most widely used physical model of memristor. However, deriving a mathematical model that fully characterizes the HP TiO2 memristor is a challenging task. As a result, simplified models such as the nonlinear
Xie, X   +4 more
core   +1 more source

Coexisting Firing Patterns in an Improved Memristive Hindmarsh–Rose Neuron Model with Multi-Frequency Alternating Current Injection

open access: yesMicromachines, 2023
With the development of memristor theory, the application of memristor in the field of the nervous system has achieved remarkable results and has bright development prospects.
Mengjiao Wang   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

A Compact Memristor Model Based on Physics-Informed Neural Networks

open access: yesMicromachines
Memristor devices have diverse physical models depending on their structure. In addition, the physical properties of memristors are described using complex differential equations.
Younghyun Lee   +2 more
doaj   +1 more source

Polarity-Controlled Coexistence of Electrochemical Metallization and Valence Change Mechanisms in a Unified Metal Halide Perovskite Memristor. [PDF]

open access: yesAdv Sci (Weinh)
Electrochemical metallization and valence change mechanisms are shown to coexist within a single metal halide perovskite memristor, selectively activated by simply reversing the electroforming voltage polarity. Ag‐driven switching delivers low operating voltages and high endurance, while intrinsic ion migration yields superior retention and resistance ...
Fernandez-Guillen I   +4 more
europepmc   +2 more sources

Experimental demonstration of associative memory with memristive neural networks [PDF]

open access: yes, 2009
When someone mentions the name of a known person we immediately recall her face and possibly many other traits. This is because we possess the so-called associative memory - the ability to correlate different memories to the same fact or event ...
Massimiliano Di Ventra, Yuriy Pershin
core  

Memristor-Based Edge Detection Dataset

open access: yes, 2019
This is the data produced for the paper titled: Memristor-Based Edge Detection. In this study, we investigate the use of silicon dioxde memristors in edge detection.
Wing Ng (6762572)   +3 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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