Results 41 to 50 of about 11,144 (308)

The Ouroboros of Memristors: Neural Networks Facilitating Memristor Programming

Proceedings of the Neuronics Conference, 2023
arXiv (2024).
Yu, Zhenming, Yang, Ming-Jay, Finkbeiner, Jan, Siegel, Sebastian, Strachan, John Paul, Neftci, Emre   +5 more
openaire   +3 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Special Memristor and Memristor-Based Compact Neuron Circuit

Journal of Circuits, Systems and Computers, 2023
Implementing neuron circuit using memristor can be more effective thanks to some properties of memristor such as nonlinearity. For this reason, many memristor-based neuron circuits have been found in the literature. This study presents a memristor-based floating neuron circuit that exhibits different types of spikes.
Altan, Muhammet Alper, Orman, Kamil, Babacan, Yunus, Yeşil, Abdullah, Yeşil, Abdullah   +4 more
openaire   +2 more sources

Memristor-Based Edge Detection Dataset

, 2019
This is the data produced for the paper titled: Memristor-Based Edge Detection. In this study, we investigate the use of silicon dioxde memristors in edge detection.
Wing Ng (6762572), Tony Kenyon (6772253), Adnan Mehonic (6774731), Daniel Mannion (7073672)   +3 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Linearized Programming of Memristors for Artificial Neuro-Sensor Signal Processing

Sensors, 2016
A linearized programming method of memristor-based neural weights is proposed. Memristor is known as an ideal element to implement a neural synapse due to its embedded functions of analog memory and analog multiplication.
Changju Yang, Hyongsuk Kim
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

Neuromorphic Engineering: From Neural Systems to Brain-Like Engineered Systems

, 2013
Morabito FC, Andreou AG, Chicca E. Neuromorphic Engineering: From Neural Systems to Brain-Like Engineered Systems. Neural Networks.
Andreou, Andreas G., Morabito, Francesco Carlo, Chicca, Elisabetta ; https://orcid.org/   +2 more
core   +1 more source