Results 41 to 50 of about 19,562 (279)

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

Results on a Novel Piecewise-Linear Memristor-Based Chaotic System

open access: yesComplexity, 2019
The paper studies a kind of piecewise-linear memristor-based chaotic system. Based on a novel and complicated piecewise-linear memristor model, a chaotic system is constructed; then a random sequence extraction approach on the basis of the given ...
Bo Wang
doaj   +1 more source

A Survey of Memristive Threshold Logic Circuits

open access: yes, 2016
In this paper, we review the different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of flow of neurotransmitters in the biological brain.
James, Alex Pappachen   +2 more
core   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji   +9 more
wiley   +1 more source

Memristor-based genetic algorithm for image restoration

open access: yesJournal of Electronic Science and Technology, 2022
This paper explores a way of deploying the classical algorithm named genetic algorithm (GA) with the memristor. The memristor is a type of circuit device with both characteristics of storage and computing, which provides the similarity between electronic
Yong-Bin Yu   +5 more
doaj   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

open access: yesAdvanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa   +6 more
wiley   +1 more source

Memristor Neural Network Training with Clock Synchronous Neuromorphic System

open access: yesMicromachines, 2019
Memristor devices are considered to have the potential to implement unsupervised learning, especially spike timing-dependent plasticity (STDP), in the field of neuromorphic hardware research.
Sumin Jo   +5 more
doaj   +1 more source

Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr0.7Ca0.3MnO3 Memristor

open access: yesNanomaterials, 2021
An amorphous Pr0.7Ca0.3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN–Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typical bipolar switching characteristics, which were attributed to the generation and
Yeon Pyo   +4 more
doaj   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

open access: yes, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott   +6 more
core  

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