Results 81 to 90 of about 22,877 (249)
Nonvolatile Memory Cell Based on Memristor Emulator
Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and retrieved whenever required. In this paper, we have proposed a non volatile memory cell based on memristor emulator. The
Santosh Parajuli +2 more
openaire +3 more sources
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su +13 more
wiley +1 more source
On the Investigation of Frequency-Related Fingerprints of Meminductor/Capacitor and Their Duals Realized by Circuit Emulators [PDF]
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their duals realized by the circuit emulators. The direct dependency of the hysteresis loop area on the inverse of operating frequency is an important property
K. Bhardwaj, M. Srivastava
doaj
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang +6 more
wiley +1 more source
A Liénard Oscillator Circuit with an Optoelectronic–Based Memristor Emulator
Many types of Liénard oscillators exist in the literature and can be constructed using various semiconductor components. Liénard oscillators can use commercial memristors; however these components are costly.
Lütfi Ulusoy +3 more
doaj +1 more source
Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang +6 more
wiley +1 more source
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Ofelia Durante +16 more
wiley +1 more source
FCS Based Memristor Emulator with Associative Learning Circuit Application
In this paper, new fully floating memristor emulator circuit that consumes ultra-low energy is presented. This proposed circuit is simple because of the fact that it doesn't contain any multiplication or various block circuits to obtain nonlinear ...
Kacar, Firat, BABACAN, YUNUS
core

