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17th European Microwave Conference, 1987, 1987
A new technique for non-linear modelling of MESFETs has been developed based on the extraction of both linear and non-linear model parameters in one optimization step. The technique eliminates various modelling inconsistency problems and can be used for MESFETs with dispersi ve model parameters.
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A new technique for non-linear modelling of MESFETs has been developed based on the extraction of both linear and non-linear model parameters in one optimization step. The technique eliminates various modelling inconsistency problems and can be used for MESFETs with dispersi ve model parameters.
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1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1975
R. Camisa +4 more
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R. Camisa +4 more
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GaAs MESFET compatible photodetectors
Optical Fiber Communication, 1986D. L. ROGERS, A. CHAU
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A novel double-recessed 4H-SiC MESFET with partly undoped space region
Superlattices and Microstructures, 2011Ali Asghar Orouji +1 more
exaly
A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage
Journal of Computational Electronics, 2015Zeinab Ramezani, Ali Asghar Orouji
exaly