Results 181 to 190 of about 3,739 (202)
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A Novel 4H-SiC MESFET With a L-Gate and a Partial p-Type Spacer
Materials Science in Semiconductor Processing, 2012Yintang Yang, Hujun Jia
exaly
Manipulation of Bilayer MoS2-Based MESFET With Flexoelectric Polarization Field
Nano EnergyChunli Zhang, Weiqiu Chen
exaly
Improved Multi-Recessed 4H–SiC MESFETs With Double-Recessed p-Buffer Layer
Materials Science in Semiconductor Processing, 2015Yehui Luo, Hujun Jia
exaly
Improved Performance of 4H–SiC MESFETs With Γ-Gate and Recessed p-Buffer Layer
Superlattices and Microstructures, 2015Hujun Jia, Peimiao Ma
exaly
A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution
IEEE Transactions on Electron Devices, 2012Amirhossein Aminbeidokhti +1 more
exaly
SEMICONDUCTOR DEVICE INCLUDING A MESFET
1990NISHIGUCHI MASANORI YOKOHAMA W +1 more
openaire +4 more sources

