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Metal oxide varistor action -a homojunction breakdown mechanism
Applications of Surface Science, 1978Abstract The metal oxide varistor action has been localized in the vicinity of directly touching ZnO grains, where no heterolayer is detected. Two separable diodes connected back to back are assumed to be formed by a finite local distribution of compensating states extending from the grain boundary into the ZnO grain.
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Conduction mechanisms in metal oxide varistors
Journal of Solid State Chemistry, 1975Lionel M. Levinson, H.R. Philipp
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Change of Varistor Voltage of Metal-oxide Varistor Influenced by Impulse Currents
IEEJ Transactions on Power and Energy, 2015Naoyuki Tsukamoto, Masaru Ishii
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Electrical Properties and Microstructure of Metal Oxides Varistors
Solid State Phenomena, 1994Nouar Tabet +2 more
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IEEE Transactions on Circuits and Systems II: Express Briefs, 2020
Yancheng Cui, Qilin Wu, Hanwu Yang
exaly
Yancheng Cui, Qilin Wu, Hanwu Yang
exaly
The High Power Metal-Oxide Varistor as a Vehicular and Aircrcraft Transient Suppessor
IEEE Transactions on Aerospace and Electronic Systems, 1976Bernard Reich
exaly

