Results 101 to 110 of about 60,973 (266)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Editorial: Plant cell wall in pathogenesis, parasitism and symbiosis, Volume II

Frontiers in Plant Science, 2023
Maïté Vicré, Vincenzo Lionetti, Vincenzo Lionetti   +2 more
doaj   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Highly‐Emissive Organic Photovoltaics Approaching Theoretical Limit Voltage and Enabling Multifunctional Energy‐Harvesting Displays

Advanced Materials, EarlyView.
A highly‐emissive organic photovoltaic employs donor–acceptor pairs with alternately localized frontier molecular orbitals, preserving high triplet energies and small reorganization energies to suppress non‐radiative recombination. As a result, it exhibits a high open‐circuit voltage approaching the Shockley–Queisser limit and a high ...
Qing‐Jun Shui, Naoya Aizawa, Jinyao Xu, Atsuko Nihonyanagi, Daigo Miyajima, Ken‐ichi Nakayama, Yutaka Majima, Seiichiro Izawa   +7 more
wiley   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

Advanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales, Aaron Reupert, Kevin Lubig, Frank A. Müller, Berit Marx‐Glowna, Ralf Röhlsberger, Till Weickhardt, Giancarlo Soavi, Martin Hafermann, Elke Wendler, Carsten Ronning   +10 more
wiley   +1 more source

Seroprevalence of measles-specific IgG and genotype-specific neutralizing antibody responses in clinically confirmed cases during the 2021–2023 measles outbreaks in Liberia [PDF]

Res Sq
Donzo KS, Logan N, MOON TD, Jetoh RW, Hosie MJ, Quashie PK, Willett BJ, Kusi KA.   +7 more
europepmc   +2 more sources

Remdesivir postexposure prophylaxis limits measles-induced “immune amnesia” and measles antibody responses in macaques

JCI Insight
Measles remains one of the most important causes of worldwide morbidity and mortality in children. Measles virus (MeV) replicates extensively in lymphoid tissue, and most deaths are due to other infectious diseases associated with MeV-induced loss of ...
Andy Kwan Pui Chan, Liting Liu, William R. Morgenlander, Manjusha Thakar, Nadine A. Peart Akindele, Jacqueline Brockhurst, Shristi Ghimire, Maggie L. Bartlett, Kelly A. Metcalf Pate, Victor C. Chu, Meghan S. Vermillion, Danielle P. Porter, Tomas Cihlar, Michael J. Mina, H. Benjamin Larman, Diane E. Griffin   +15 more
doaj   +1 more source

MeV volume [PDF]

Nature, 1982
openaire   +1 more source