Results 131 to 140 of about 187,906 (313)

EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS [PDF]

open access: yes, 1994
In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects ...
PAN GQ, LI LQ, YOU ZP, LIAO XB, DIAO HW
core  

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking

open access: yesAdvanced Materials, EarlyView.
Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee   +23 more
wiley   +1 more source

GOES 275–500 MeV and >500 MeV Proton Observations

open access: yes
On GOES 16–19, the primary instrument for measuring solar- and galactic-origin energetic protons is the Solar and Galactic Proton Sensor (SGPS). Each satellite carries two SGPSs, one looking eastward and one looking westward in the orbit.
Juan V. Rodriguez   +2 more
openaire   +1 more source

Strengthened Interfacial Coupling Between Self‐Assembled Monolayers and Bulk Heterojunctions Enables Thermally Stable Organic Solar Cells

open access: yesAdvanced Materials, EarlyView.
Molecularly engineered self‐assembled monolayers (SAMs) featuring extended conjugated terminals facilitate superior interfacial coupling with the organic solar cell active layer. By physically anchoring the local morphology, this design suppresses thermal degradation, allowing devices to operate at 85°C for 150 h before degrading to 90% of their ...
Gengxin Du   +17 more
wiley   +1 more source

Transient Laser‐Shocked Synthesis of Amorphous Layer‐Supported Metal Nanocrystals for Efficient Nitrate Reduction

open access: yesAdvanced Materials, EarlyView.
A general, versatile laser‐shock synthesis process is reported to produce various bimetallic CuNi, CuFe, CuCo, and medium‐entropy CuFeCoNi heterostructures, in which crystalline metal nanoparticles are anchored to amorphous hydroxide supports. During nitrate reduction reaction, the heterostructures undergo dynamic amorphous/crystalline reconstruction ...
Weihua Guo   +18 more
wiley   +1 more source

Appendix MEV Vol 8 Iss 1 [PDF]

open access: yes, 2017
Andriani, Dian, Andriani, D. (Dian)
core   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

open access: yesAdvanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan   +9 more
wiley   +1 more source

Diffusive processes in polyacrylic acid hydrogels [PDF]

open access: yes, 1998
The aim of this work was to characterise the diffusive properties of superabsorbent polymer systems prepared by free radical crosslinking polymerisation of acrylic acid. The polyelectrolyte nature of these hydrogels gives rise to high swelling capacities,
Dewhurst, Peter F.
core  

Editorial: Plant cell wall in pathogenesis, parasitism and symbiosis, Volume II

open access: yesFrontiers in Plant Science, 2023
Maïté Vicré   +2 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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