Results 21 to 30 of about 109,693 (288)

Automatic control technology of mechanical equipment based on microelectronic sensor signal control

Frontiers in Mechanical Engineering
PurposeThis study is to provide a new method for the development of automatic control technology (ACT) of mechanical equipment and promote its wide application in industrial production, and to explore the ACT of mechanical equipment under the control of ...
Xiaofeng Wei, Yi Wei
doaj   +1 more source

DEVELOPMENT OF A PROTOTYPE OF "SMART" CLOTHING WITH REMOTE CONTROL AND TEMPERATURE CONTROL BY MEANS OF MICROELECTRONIC DESIGN

Измерение, мониторинг, управление, контроль, 2022
Background. The most common cause of human disease is hypothermia of the body. This problem can be solved by using «smart» clothes with the ability to control temperature and adapt to the surrounding external conditions.
D.L. Ovchinnikov, А.Yu. Tychkov, D.S. Chernyshov, A.D. Sashina   +3 more
doaj   +1 more source

Collaboration Strategies in Innovation Ecosystems: An Empirical Study of the German Microelectronics and Photonics Industries

Technology Innovation Management Review, 2018
Effective collaboration between companies and research organizations is key to successful innovation systems. Against the background of digitalization, a shift from traditional innovation systems towards innovation ecosystems can be observed.
Fabian Schroth, Johann Jakob Häußermann   +1 more
doaj   +1 more source

High‐Entropy Alloy Interlayers Toward Advanced Joining for High‐Performance Structural Applications: Current Progress and Emerging Challenges

Advanced Engineering Materials, EarlyView.
HEA interlayers offer a versatile route for joining high‐performance structural materials. Their compositional and structural design regulates interfacial reactions, suppresses brittle IMCs, and improves metallurgical bonding. Sandwich interlayers further integrate defect healing with precipitation strengthening, enabling improved strength–ductility ...
Lin Yuan, Jiafen Song, Jinglong Li, Jiangtao Xiong, Tao Yang   +4 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Silicon-28-Tetrafluoride as an Educt of Isotope-Engineered Silicon Compounds and Bulk Materials for Quantum Systems

Molecules
This review provides a summary of the existing literature on a crucial raw material for the production of isotopically pure semiconductors, which are essential for the development of second-generation quantum systems. Silicon-28-tetrafluoride (28SiF4) is
Owen C. Ernst, David Uebel, Roman Brendler, Konstantin Kraushaar, Max Steudel, Jörg Acker, Edwin Kroke   +6 more
doaj   +1 more source

Review and Perspectives of Micro/Nano Technologies as Key-Enablers of 6G

IEEE Access, 2022
To date, the rollout of 5G (5th generation of mobile communications) has been ongoing for more than two years, with most of it still to come. Meanwhile, Key-Performance Indicators (KPIs) and Key Enabling Technologies (KETs) of Beyond-5G (B5G) and 6G (6th
Jacopo Iannacci, H. Vincent Poor
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Characterization of SOI fabrication process using gated-diode measurements and TEM studies

Journal of Telecommunications and Information Technology, 2000
SOI fabrication process was characterized using electrical and TEM methods. The investigated SOI structures included partially and fully depleted capacitors, gated diodes and transistors fabricated on SIMOX substrates.
Jerzy Katcki, Jacek Ratajczak, Andrzej Jakubowski, Lidia Łukasiak, Daniel Tomaszewski, Jan Gibki   +5 more
doaj   +1 more source

A study on dielectric properties of a new polyimide film suitable for interlayer dielectric material in microelectronics applications

, 2000
Interlayer dielectric film formation under Al wirings for VLSI and ULSI devices requires low temperature processing and high surface planarization capability, Polymers as a dielectric material play a significant role in achieving the current state-of-the
H Kuntman, Kuntman, AYTEN, KUNTMAN, H, A Kuntman, Kuntman, A   +4 more
core   +1 more source