Results 21 to 30 of about 48,779 (301)

Development of a CMOS-Compatible Carbon Nanotube Array Transfer Method

Micromachines, 2021
Carbon nanotubes (CNTs) have, over the years, been used in research as a promising material in electronics as a thermal interface material and as interconnects amongst other applications.
Chun Fei Siah, Lucas Yu Xiang Lum, Jianxiong Wang, Simon Chun Kiat Goh, Chong Wei Tan, Liangxing Hu, Philippe Coquet, Hong Li, Chuan Seng Tan, Beng Kang Tay   +9 more
doaj   +1 more source

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

Nanomaterials, 2021
Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale.
Antonio Alessio Leonardi, Maria José Lo Faro, Alessia Irrera   +2 more
doaj   +1 more source

Properties of the Optical Planar Polymer Waveguides Deposited on Printed Circuit Boards [PDF]

, 2015
This paper reports on a technology for realization of an optical planar waveguide layer on duroid substrate and on FR4 fiber reinforced board material printed circuit boards.
Hyps, Petr, Jerabek, Vitezslav, Nekvindova, Pavla, Prajzler, Vaclav   +3 more
core   +2 more sources

Self-Aligned Staggered Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Ultra-Low Contact Resistance for High-Speed Circuits Application

IEEE Journal of the Electron Devices Society
A self-aligned (SA) staggered structure for amorphous-In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. The bottom contact between n+-IGZO and source/drain (S/D) enables larger contact area and shorter current-transmission distance, thus ...
Chuanke Chen, Xinlv Duan, Congyan Lu, Xichen Chuai, Wanming Wu, Chunyu Zhang, Chen Gu, Guanhua Yang, Nianduan Lu, Di Geng, Ling Li   +10 more
doaj   +1 more source

TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization

IEEE Journal of the Electron Devices Society
Threshold control of amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) is generally a critical issue through material composition adjustment. Instead, this work reports a cylindrical vertical double-surrounding-gate (DSG) a-IGZO FET, featuring ...
Yue Zhao, Lihua Xu, Chuanke Chen, Xufan Li, Kexin Shang, Di Geng, Lingfei Wang, Ling Li   +7 more
doaj   +1 more source

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Nano-Micro Letters, 2021
Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor ...
Kun Liang, Dingwei Li, Huihui Ren, Momo Zhao, Hong Wang, Mengfan Ding, Guangwei Xu, Xiaolong Zhao, Shibing Long, Siyuan Zhu, Pei Sheng, Wenbin Li, Xiao Lin, Bowen Zhu   +13 more
doaj   +1 more source

Two autowire versions for CDC-3200 and IBM-360 [PDF]

, 1972
Microelectronics program was initiated to evaluate circuitry, packaging methods, and fabrication approaches necessary to produce completely procured logic system.
Billingsley, J. B.
core   +1 more source

Chemical patterning for the highly specific and programmed assembly of nanostructures [PDF]

, 2005
We have developed a new chemical patterning technique based on standard lithography-based processes to assemble nanostructures on surfaces with extraordinarily high selectivity.
Alivisatos, Arun Majumdar, Balaji Kannan, Halperin, Hoff, Kannan, Kenneth Castelino, Mirkin, Pallandre, Rajan P. Kulkarni, Sharma, Srinath Satyanarayana, Zhang   +12 more
core   +1 more source

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

Advanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente, J. Nunes‐Pereira, A. P. Silva, P. N. B. Reis   +3 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source