Results 251 to 260 of about 88,392 (295)

Ultrafast mid-IR Fe:ZnSe laser

2020 International Conference Laser Optics (ICLO), 2020
We report the graphene-based passive mode-locking in Fe:ZnSe. The laser delivers 415 mW average power output radiation at a wavelength of 4.4 μm being pumped by 7-W fiber Er:ZBLAN laser. A pulse duration of 732 fs retrieved from the first-order autocorrelation function.
A. V. Pushkin, E. A. Migal, S. Tokita, Yu. V. Korostelin, F. V. Potemkin   +4 more
openaire   +1 more source

Mid-IR Cathodoluminescence of Fe:ZnSe

Optics and Spectroscopy, 2018
The dependences of the integral intensity and kinetics of mid-IR cathodoluminescence (CL) of Fe:ZnSe crystals on an iron concentration varying from 0.01 to 14 wt % are studied in the temperature range from 78 to 300 K. It is found that the maximum mid-IR CL intensity in Fe:ZnSe is observed at an Fe concentration of about 2 wt % at room temperature and ...
M. V. Chukichev, V. P. Chegnov, R. R. Rezvanov, O. I. Chegnova, V. P. Kalinushkin, A. A. Gladilin   +5 more
openaire   +1 more source

Monolithic Mid-IR Supercontinuum Source

Lasers Congress 2016 (ASSL, LSC, LAC), 2016
We review our recent work on fusion splicing of silica fiber to As2S3 chalcogenide fiber to enable a monolithic all fiber based mid-IR supercontinuum source.
L. Brandon Shaw, Rajesh Thapa, Rafael R. Gattass, Vinh Nguyen, Geoff Chin, Dan Gibson, Woohong Kim, J.S. Sanghera   +7 more
openaire   +1 more source

Mid-IR Photonic Integrated Circuits

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2021
We describe the framework for a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical components such as spectral multiplexers and demultiplexers on the native GaSb substrate of an interband cascade laser (ICL) structure.1,2 These building blocks may be used, for example, to fabricate ...
J. R. Meyer, M. Kim, C. S. Kim, C. L. Canedy, C. D. Merritt, W. W. Bewley, I. Vurgaftman   +6 more
openaire   +1 more source

Integrated Mid-IR Frequency Combs

High-Brightness Sources and Light-Driven Interactions, 2016
Generation of Kerr frequency combs with QCL centered at 4.55μm pumping high quality factor CaF2 and MgF2 whispering gallery mode resonators is discussed. Frequency combs were observed with pump powers of less than 40 mW.
Anatoliy A. Savchenkov, Vladimir. S. Ilchenko, Andrey B. Matsko, Lute Maleki   +3 more
openaire   +1 more source

Mid-IR InAsSb photovoltaic detectors

SPIE Proceedings, 2000
We describe a mid-IR photovoltaic detector using InAsSb as active material, grown by MBE on a GaSb substrate. The purpose of this study is to show that quantum detectors can offer an alternative to thermal detectors for high temperature operation. With a 9 percent Sb content, InAsSb is lattice matched to GaSb and thus provides an excellent material ...
Anna Rakovska, Vincent Berger, Xavier Marcadet, Genevieve Glastre, Borge Vinter, K. Bouzehouane, Daniel Kaplan, T. Oksehendler   +7 more
openaire   +1 more source

Mid-IR Interband Cascade Lasers

MRS Proceedings, 2005
ABSTRACTEfficient mid-IR interband cascade (IC) lasers have been developed based on III-V semiconductor materials with lasing emission covering a wavelength range from 2.7 to 5.6 microns. These IC lasers reuse injected electrons in cascade stages for photon generation with high quantum efficiency to achieve high output powers.
Rui Q. Yang, Cory J. Hill, Yueming Qiu
openaire   +1 more source

Mid-IR quantum dot VECSEL

2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, 2013
Here, we present the first vertical external cavity surface emitting lasers (VECSELs) based on quantum dot (QD) active regions and operating in the wavelength range above 2.8 μm.
A. Khiar, M. Witzan, A. Hochreiner, M. Eibelhuber, T. Schwarzl, G. Springholz   +5 more
openaire   +1 more source

Group IV mid-IR photonics

2015 IEEE Summer Topicals Meeting Series (SUM), 2015
Silicon and germanium are transparent up to approximately 8 μm and 15 μm, respectively, thus offering a range of applications in biochemical and environmental sensing, medicine, astronomy and communications [1]. Silicon-on-insulator (SOI), can be used only up to 4 μm due to the high absorption loss of silicon dioxide, and therefore alternative material
Reed, G. T., Nedeljkovic, M., Soler Penades, J., Mitchell, C. J., Khokhar, A. Z., Littlejohns, C. J., Stankovic, S., TROIA, Benedetto, PASSARO, Vittorio, Shen, L., Healy, N., Peacock, A. C., Ortega Monux, A., Wanguemert Perez, G., Molina Fernandez, I., Cheben, P., Ackert, J. J., Knights, A. P., Thomson, D. J., Gardes, F. Y., Mashanovich, G. Z.   +20 more
openaire   +3 more sources

GaAs Mid-IR Electrically Tunable Metasurfaces

Nano Letters
In this work, we explore III-V based metal-semiconductor-metal structures for tunable metasurfaces. We use an epitaxial transfer technique to transfer a III-V thin film directly on metallic surfaces, realizing III-V metal-semiconductor-metal (MSM) structures without heavily doped semiconductors as substitutes for metal layers.
Hyun Uk Chae, Bo Shrewsbury, Ragib Ahsan, Michelle L. Povinelli, Rehan Kapadia   +4 more
openaire   +2 more sources