Results 211 to 220 of about 6,979 (259)

Reliable Millimeter Wave Communication for IoT Devices

ICC 2021 - IEEE International Conference on Communications, 2021
In this paper, we propose a nearest line-of-sight relay (NLR) selection technique for internet of things (IoT) devices in millimeter wave (mmWave) relaying systems. We present a tractable analytical framework to characterize the network connectivity for the proposed technique using tools from stochastic geometry.
Mohamed Ibrahim 0010, Walaa Hamouda
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Superlattices as millimeter-wave devices

Superlattices and Microstructures, 1986
Abstract Superlattices have long been proposed as possible negative resistance devices. Here we discuss some results of an ongoing study of their potential for such applications. We focus on one particular type of superlattice, the lateral surface superlattice, and one particular frequency range, the millimeter-wave range.
Robert O. Grondin, Jennifer C. Wang
openaire   +1 more source

Millimeter-Wave Device Technology

IEEE Transactions on Microwave Theory and Techniques, 1982
We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques described are ion implantation, laser annealing, unique
A. Rosen, M. Caulton, P. Stabile, A.M. Gombar, W.M. Janton, C.P. Wu, J.F. Corboy, C.W. Magee   +7 more
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Millimeter wave ferrite devices

IEEE Transactions on Magnetics, 1982
Several ferrite control devices have been designed, fabricated and evaluated for 35 GHz dielectric waveguide applications. These devices include phase shifters and circulators utilizing spinel ferrites, and isolators with hexagonal ferrites. These devices were optimized in a magnesium titanate dielectric waveguide type transmission line for operation ...
R. Babbitt, R. Stern
openaire   +1 more source

Millimeter-wave CMOS device modeling and simulation

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004
Challenges for modeling and simulating active and passive 130 nm CMOS devices at mm-wave frequencies (>30 GHz) are discussed. Small-signal lumped circuits with appropriate parasitic elements are used to model the active transistor devices with excellent broadband accuracy.
Chinh H. Doan, Sohrab Emami, Ali M. Niknejad, Robert W. Brodersen   +3 more
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Millimeter-Wave Antennas for Mobile Devices and Networks

2019 12th Global Symposium on Millimeter Waves (GSMM), 2019
Beam-steerable millimeter-wave antennas may enable more efficient use of RF energy in line-of-sight propagation paths than the currently used antennas at microwave frequencies. This paper discusses the challenges related to millimeter-wave antennas for mobile devices and networks and reviews possible approaches for realizing beam-steerable antennas for
Ala-Laurinaho, Juha, Kurvinen, Joni, Kahkonen, Henri, Lehtovuori, Anu, Leino, Mikko, Chen, Zhi Ning, Viikari, Ville   +7 more
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New devices for millimeter-wave applications

Annales Des Télécommunications, 1997
The possibilities for future developments of mm-wave devices are reviewed. New concepts and extensions of presently available devices are considered concerning sources, amplifiers and mixing. We discussed such ideas as micro-cavity triodes unbedded in the semiconductor chip with first experimental evidence available.
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Indium phosphide millimeter-wave devices

1983 Eighth International Conference on Infrared and Millimeter Waves, 1983
The use of InP for Gunn oscillators and amplifiers has recently led to a number of very useful products for millimeterwave applications. The ability to grow high purity indium phosphide material as required for Gunn effect devices and the increased understanding of the operation of both amplifier and oscillator diodes have lead to some significant ...
Berin Fank, James Crowley, Lothar Wandinger, Dave Rubin   +3 more
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Optical Control Of Millimeter Wave Devices

SPIE Proceedings, 1987
Coherent mixing of optical radiation from a tunable CW ring dye laser and a stablized HeNe laser was used to inject broadband microwave signals into GaAs MESFETs (FETs), AlGaAs-GaAs HEMTs and monolithic FET amplifiers up to 55 GHz. Using this technique, amplification of an optically injected signal at 32 GHz, direct injection locking of a 17 GHz GaAs ...
Harold R. Fetterman, Wei-Yu Wu, David Ni
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Ultrafast Optoelectronic Devices for Millimeter-Waves

MTT-S International Microwave Symposium Digest, 2005
We discuss a new class of devices in which the propagation parameters of millimeter-waves are controlled by a laser induced electron-hole plasma in a semiconductor waveguide. The performance of high speed (better than one nanosecond), efficient millimeter-wave phase shifters, modulators, switches, and gating devices are reported.
C.H. Lee, A.M. Vaucher, M.G. Li, C.D. Striffler   +3 more
openaire   +1 more source