Results 251 to 260 of about 59,187 (301)

Millimeter wave ferrite devices

IEEE Transactions on Magnetics, 1982
Several ferrite control devices have been designed, fabricated and evaluated for 35 GHz dielectric waveguide applications. These devices include phase shifters and circulators utilizing spinel ferrites, and isolators with hexagonal ferrites. These devices were optimized in a magnesium titanate dielectric waveguide type transmission line for operation ...
R. Babbitt, R. Stern
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Superlattices as millimeter-wave devices

Superlattices and Microstructures, 1986
Abstract Superlattices have long been proposed as possible negative resistance devices. Here we discuss some results of an ongoing study of their potential for such applications. We focus on one particular type of superlattice, the lateral surface superlattice, and one particular frequency range, the millimeter-wave range.
Robert O. Grondin, Jennifer C. Wang
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Indium phosphide millimeter-wave devices

1983 Eighth International Conference on Infrared and Millimeter Waves, 1983
The use of InP for Gunn oscillators and amplifiers has recently led to a number of very useful products for millimeterwave applications. The ability to grow high purity indium phosphide material as required for Gunn effect devices and the increased understanding of the operation of both amplifier and oscillator diodes have lead to some significant ...
Berin Fank, James Crowley, Lothar Wandinger, Dave Rubin   +3 more
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Millimeter-wave region optical devices

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153), 2002
This paper describes ultra-high-speed optical-device structures and characteristics of Mach-Zehnder waveguide LiNbO/sub 3/ modulators, electroabsorption MQW semiconductor modulators, and edge-coupled photodetectors.
O. Mitomi, K. Wakita, K. Kato
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Optically Controlled Millimeter-Wave Devices

SPIE Proceedings, 1984
A dynamic bridge method has been developed to measure the time varying phase shift and attenuation of millimeter-waves in semiconductor waveguides when perturbed by optically induced plasmas. The resolution of this technique is 2 ns in real time. Comparison of this method with a theoretical model is also discussed.
A. M. Vaucher, M. G. Li, C. D. Striffler, C. H. Lee   +3 more
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Millimeter-Wave Semiconductor Devices

IEEE Transactions on Microwave Theory and Techniques, 1976
Special techniques used in the construction of various types of millimeter-wave diodes are presented. The performance of millimeter Gunn and IMPATT devices is reviewed and other factors influencing the application of these diodes are discussed. The performance and characteristics of small-area diodes used for millimeter-wave modulation, mixing, and ...
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Graphene in millimeter wave devices

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014
We present work on graphene devices and circuits for microwave and millimeter wave applications, including detectors, mixers and microwave amplifiers. Field effect transistors were fabricated from exfoliated graphene and graphene grown using chemical vapor deposition (CVD).
Jan Stake, Michael Andersson, Audrey Zak, Josip Vukusic, Andrei Vorobiev   +4 more
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Millimeter Wave Solid State Devices

MRS Proceedings, 2000
ABSTRACTExamples of novel solid state devices are presented, together with descriptions of their applicability to the diagnosis of laboratory, processing and fusion plasmas. GaAs varactor diodes can be arranged in large monolithic grid arrays, forming millimeter wave frequency multiplier based sources and high speed switches, or embedded in ...
Steven A. Rosenau, Cheng Liang, Weikang Zhang, Bihe Deng, Weiying Li, Chia-Chan Chang, Pei-Ling Hsu, Richard P. Hsia, Fan Jiangs, Calvin W. Domier, Neville C. Luhmann   +10 more
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Optical Control Of Millimeter Wave Devices

SPIE Proceedings, 1987
Coherent mixing of optical radiation from a tunable CW ring dye laser and a stablized HeNe laser was used to inject broadband microwave signals into GaAs MESFETs (FETs), AlGaAs-GaAs HEMTs and monolithic FET amplifiers up to 55 GHz. Using this technique, amplification of an optically injected signal at 32 GHz, direct injection locking of a 17 GHz GaAs ...
Harold R. Fetterman, Wei-Yu Wu, David Ni
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Millimeter wave devices and circuits

1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1978
The status and trends in millimeter wave devices and technologies, with emphasis on power generation and amplification, will be discussed, stressing integrated circuit techniques. The influence of emerging markets on device and circuit directions will also be highlighted.
S. Iglehart, C. Lee
openaire   +1 more source