Results 251 to 260 of about 3,090,742 (298)

New devices for millimeter-wave applications

Annales Des Télécommunications, 1997
The possibilities for future developments of mm-wave devices are reviewed. New concepts and extensions of presently available devices are considered concerning sources, amplifiers and mixing. We discussed such ideas as micro-cavity triodes unbedded in the semiconductor chip with first experimental evidence available.
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Millimeter-wave CMOS device modeling and simulation

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004
Challenges for modeling and simulating active and passive 130 nm CMOS devices at mm-wave frequencies (>30 GHz) are discussed. Small-signal lumped circuits with appropriate parasitic elements are used to model the active transistor devices with excellent broadband accuracy.
Chinh H. Doan, Sohrab Emami, Ali M. Niknejad, Robert W. Brodersen   +3 more
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Millimeter-Wave Antennas for Mobile Devices and Networks

2019 12th Global Symposium on Millimeter Waves (GSMM), 2019
Beam-steerable millimeter-wave antennas may enable more efficient use of RF energy in line-of-sight propagation paths than the currently used antennas at microwave frequencies. This paper discusses the challenges related to millimeter-wave antennas for mobile devices and networks and reviews possible approaches for realizing beam-steerable antennas for
Ala-Laurinaho, Juha, Kurvinen, Joni, Kahkonen, Henri, Lehtovuori, Anu, Leino, Mikko, Chen, Zhi Ning, Viikari, Ville   +7 more
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Indium phosphide millimeter-wave devices

1983 Eighth International Conference on Infrared and Millimeter Waves, 1983
The use of InP for Gunn oscillators and amplifiers has recently led to a number of very useful products for millimeterwave applications. The ability to grow high purity indium phosphide material as required for Gunn effect devices and the increased understanding of the operation of both amplifier and oscillator diodes have lead to some significant ...
Berin Fank, James Crowley, Lothar Wandinger, Dave Rubin   +3 more
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Optical Control Of Millimeter Wave Devices

SPIE Proceedings, 1987
Coherent mixing of optical radiation from a tunable CW ring dye laser and a stablized HeNe laser was used to inject broadband microwave signals into GaAs MESFETs (FETs), AlGaAs-GaAs HEMTs and monolithic FET amplifiers up to 55 GHz. Using this technique, amplification of an optically injected signal at 32 GHz, direct injection locking of a 17 GHz GaAs ...
Harold R. Fetterman, Wei-Yu Wu, David Ni
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Millimeter wave superconducting devices

AIP Conference Proceedings, 1978
Significant progress has been made during the past two years in the development of millimeter wave superconducting devices. The present status of bolometric detectors and mixers, Josephson‐effect mixers, quasiparticle mixers, and Josephson‐effect parametric amplifiers will be reviewed.
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Ultrafast Optoelectronic Devices for Millimeter-Waves

MTT-S International Microwave Symposium Digest, 2005
We discuss a new class of devices in which the propagation parameters of millimeter-waves are controlled by a laser induced electron-hole plasma in a semiconductor waveguide. The performance of high speed (better than one nanosecond), efficient millimeter-wave phase shifters, modulators, switches, and gating devices are reported.
C.H. Lee, A.M. Vaucher, M.G. Li, C.D. Striffler   +3 more
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Millimeter-wave region optical devices

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153), 2002
This paper describes ultra-high-speed optical-device structures and characteristics of Mach-Zehnder waveguide LiNbO/sub 3/ modulators, electroabsorption MQW semiconductor modulators, and edge-coupled photodetectors.
O. Mitomi, K. Wakita, K. Kato
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Optically Controlled Millimeter-Wave Devices

SPIE Proceedings, 1984
A dynamic bridge method has been developed to measure the time varying phase shift and attenuation of millimeter-waves in semiconductor waveguides when perturbed by optically induced plasmas. The resolution of this technique is 2 ns in real time. Comparison of this method with a theoretical model is also discussed.
A. M. Vaucher, M. G. Li, C. D. Striffler, C. H. Lee   +3 more
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Millimeter Wave Solid State Devices

MRS Proceedings, 2000
ABSTRACTExamples of novel solid state devices are presented, together with descriptions of their applicability to the diagnosis of laboratory, processing and fusion plasmas. GaAs varactor diodes can be arranged in large monolithic grid arrays, forming millimeter wave frequency multiplier based sources and high speed switches, or embedded in ...
Steven A. Rosenau, Cheng Liang, Weikang Zhang, Bihe Deng, Weiying Li, Chia-Chan Chang, Pei-Ling Hsu, Richard P. Hsia, Fan Jiangs, Calvin W. Domier, Neville C. Luhmann   +10 more
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