Results 81 to 90 of about 44,683 (266)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Why here? Factors influencing Palestinian refugees from Syria in choosing Germany or Sweden as asylum destinations

Comparative Migration Studies, 2018
This paper presents the findings of 33 interviews, carried out in 2017, examining the factors influencing Palestinian refugees from Syria (PRS) in choosing Germany or Sweden as asylum destinations. The findings showed that there was a very high degree of
Jason Tucker
doaj   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Integration of Redox‐Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching

Advanced Electronic Materials, EarlyView.
Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz, Marco Moors, Tom Scherzer, Olesya Daikos, Jens Bauer, Andrea Prager, Jan Griebel, Yeji Lee, Vineeth Kumar Bandari, Thomas Blaudeck, Oliver G. Schmidt, Kirill Monakhov   +11 more
wiley   +1 more source

Numerical and experimental study of floc characteristics induced by fully baffled mixing tank agitated with retreat curved impeller

Al-Qadisiyah Journal for Engineering Science
This study examines the impact of mixing methods in enhancing the coagulation-flocculation process. Two types of coagulants: Aluminum Sulfate Hydrate [Al2(SO4)3.16H2O] and Magnesium Chloride [MgCl2] were used.
Safaa Salman Ahmad, Adnan Abdul Ameer Abdulrasool, Faiq A. Hamad, Ayman A Hassan, Anaam K. Abdo, Asmaa E. Erdeiny   +5 more
doaj   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Fabrication of lightweight polymer products with excellent mechanical properties using a novel double-sided in-mold decoration combined with fiber-reinforced microcellular injection molding process

Journal of Materials Research and Technology
This paper introduces a novel molding process known as the double-sided in-mold decoration combined with fiber-reinforced microcellular injection molding (DS-IMD/FR-MIM) process.
Shengrui Yu, Kai Wang, Lei Xu, Senzhen Song, Jiangen Yang, Wen Han, Huamin Zhou   +6 more
doaj   +1 more source