Results 81 to 90 of about 82,236 (297)
, 2013 3. Report on intersessional activities: 3.1 Implementation status of the GE-MIM-xiwork plan 3.2 Matters arising from IODE-XXI and the IODE officersmeeting (2012) 3.2.1 Matters arisen from IODE-XXI 3.2.2 Matters arisen from the 2010 officers meeting
core
Advanced Electronic Materials, EarlyView.A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch +9 more
wiley +1 more source
MIM-Reasoner: Learning with Theoretical Guarantees for Multiplex Influence Maximization [PDF]
Multiplex influence maximization (MIM) asks us to identify a set of seed users such as to maximize the expected number of influenced users in a multiplex network.
Do, Nguyen +4 more
core +1 more source
Na parábola do desvalido no caminho (Lc 10, 25-37): o autoconceito pela humanização em saúde
Pistis & Praxis: Teologia e Pastoral, 2011 Com este texto procuramos uma leitura do pensamento de W. James sobre o self (autoconceito) no âmbito da parábola do bom samaritano (Lc 10, 25-37). Aqui, encontramos uma original forma de abordar o sentido da humanização, em saúde, pelos fundamentos ...
Ramiro Délio Borges de Meneses
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Resistively switching TiN/Hf0.5Zr0.5/Au valance‐change memory devices show period‐doubling bifurcations, arising from competing influences of filamentary counter‐eightwise filamentary switching and eigthwise electrochemical oxygen exchange at the active electrode.
Sebastian Obernberger +4 more
wiley +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
COX14 Variants Are Associated With Mitochondrial Complex IV Deficiency Nuclear Type 10 (MC4DN10)
American Journal of Medical Genetics Part A, EarlyView.ABSTRACT COX14 encodes a transmembrane protein essential for cytochrome c oxidase (COX) complex assembly. A homozygous missense variant in COX14 was reported in three siblings from a single consanguineous family with severe, fatal infantile mitochondrial complex IV deficiency nuclear type 10 (MC4DN10; MIM# 619053).
Elias K. Awad +7 more
wiley +1 more source
Active Metal Template Synthesis of Rotaxanes From BINOL‐Phosphate Macrocycles
Angewandte Chemie, EarlyView.The use of macrocyclic BINOL‐phosphates allows for the active metal template synthesis of [2]rotaxanes via Cu(I)‐mediated alkyne‐azide cycloaddition. DFT calculations, control experiments, and kinetic experiments support a dinuclear phosphate‐Cu2 intermediate.
Nikolai Brodt +10 more
wiley +2 more sources