Results 151 to 160 of about 2,771 (177)
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Characterization Of MOCVD Films
SPIE Proceedings, 1989The far infrared reflectance technique has been used to characterize ZnTe and CdTe films grown using Metal Organic Chemical Vapor Deposition (MOCVD) on GaAs substrates. Carrier concentrations, derived from the reflectance measurements, decreased with increasing ZnTe film thickness as a result of the large lattice mismatch between ZnTe and GaAs.
W. H. Wright +3 more
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MOCVD superconducting oxide films
Journal of Crystal Growth, 1991Abstract Preparation of high- T c superconducting oxide films by MOCVD, their films structure and superconducting properties are reviewed from the standpoint of “nano-composites” and “fine-composites”. Y-Ba-Cu-O (YBCO) films formed on SrTiO 3 (100) at 850°C showed a superconducting transition temperature with zero resistivity above 90 K.
Toshio Hirai, Hisanori Yamane
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Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9), 2002
A large scale production of GaAs based solar cells with MOCVD will give rise to a considerable use of arsine. Therefore a gas treatment system is needed to convert the waste gasses into less toxic compounds. In this study seven different gas treatment systems for MOCVD are compared by quantifying the environmental aspects.
A. van Geelen, P.H.M. Bink, L.J. Giling
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A large scale production of GaAs based solar cells with MOCVD will give rise to a considerable use of arsine. Therefore a gas treatment system is needed to convert the waste gasses into less toxic compounds. In this study seven different gas treatment systems for MOCVD are compared by quantifying the environmental aspects.
A. van Geelen, P.H.M. Bink, L.J. Giling
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MOCVD of HTS and GMR perovskites by aerosol and liquid delivery MOCVD
Journal of Alloys and Compounds, 1997Abstract Aerosol and liquid delivery MOCVD are techniques that were developed to overcome the problems with thermally less stable alkaline earth metal precursors in the deposition of alkaline earth doped HTS and GMR perovskites. In this paper, we will discuss the advantages and disadvantages of these techniques compared to the conventional MOCVD ...
K.-H. Dahmen, M.W. Carris
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2020
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2001
The metalorganic chemical vapor deposition (MOCVD) of II-VI semiconducting compounds (II-IVs) has been studied extensively since 1980, due to the relevance of these materials in many ®elds of optoelectronics. The MOCVD growth of II-VIs today includes wide-band-gap binary compounds, ternary and quaternary pseudobinary alloys for applications in blue ...
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The metalorganic chemical vapor deposition (MOCVD) of II-VI semiconducting compounds (II-IVs) has been studied extensively since 1980, due to the relevance of these materials in many ®elds of optoelectronics. The MOCVD growth of II-VIs today includes wide-band-gap binary compounds, ternary and quaternary pseudobinary alloys for applications in blue ...
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2023
?????????????????? RF PE MOCVD-???????????? ?????????????????????? ???????????????????? (??????) ?? ?????????????????????????? ??-???????????????????????? ???????????????????? ????????????????(IV) ???? ?????????????????????? ???? ???????????? ?????????? ??????????????????????-?????????????????????? ??????????????????. ??????????????????????, ???? ??????
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?????????????????? RF PE MOCVD-???????????? ?????????????????????? ???????????????????? (??????) ?? ?????????????????????????? ??-???????????????????????? ???????????????????? ????????????????(IV) ???? ?????????????????????? ???? ???????????? ?????????? ??????????????????????-?????????????????????? ??????????????????. ??????????????????????, ???? ??????
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Optimization of MOCVD grown InGaP metamorphic buffers with MOCVD growth conditions and surfactant
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013InGaP metamorphic (MM) buffers are utilized in inverted metamorphic solar cells which offer high efficiency and provide for low cost and weight flexible solar cells. Metamorphic buffers are typically produced by metal organic chemical vapor deposition (MOCVD) technology and allow for a change in InGaP lattice constant while managing dislocation density
Chris W. Ebert +4 more
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Physics World, 1989
Those of us who have heard Manijeh Razeghi's conference presentations will be familiar with the large amount of data she commands. Her book 'The MOCVD challenge' similarly presents the reader with a wide ranging and detailed study of the InP/InGaAs(P) materials system.
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Those of us who have heard Manijeh Razeghi's conference presentations will be familiar with the large amount of data she commands. Her book 'The MOCVD challenge' similarly presents the reader with a wide ranging and detailed study of the InP/InGaAs(P) materials system.
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MOCVD technology for semiconductors
Materials Letters, 1997This article commences with a brief review of the MOCVD process as it applies to semiconductors. The various precursors used, including metalorganic compounds, hydride gases, and dopants are discussed, together with the basic deposition process. Typical MOCVD systems used for R&D and manufacturing are described, including the constraints imposed by ...
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