Results 1 to 10 of about 1,773,768 (136)
InP and InGaAs grown on InP substrate by molecular beam epitaxy [PDF]
MATEC Web of Conferences, 2022 InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio.
Yu Hailong +5 more
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Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers
Micromachines, 2022 Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with
Huaixin Guo +4 more
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Slovenian Veterinary Research, 2022 Lymphomas, leukemias and mast cell tumors belong to the most important group among all neoplasms affecting dog species. Diagnosis, staging and determining the cell type involved in a specific tumor represent a challenge for researchers and clinicians ...
Majlind Sulçe +6 more
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Design of GaN-based input harmonic control RF power amplifier
Dianzi Jishu Yingyong, 2021 The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test ...
Shao Yuwei, Tao Hongqi
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IEEE Journal of the Electron Devices Society, 2021 We have demonstrated a novel method of depositing ALD-Al2O3/PECVD-SiO2 bi-layer dielectric to passive the surface channels of the hydrogen-terminated diamond (H-diamond).
Xinxin Yu +7 more
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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
Nanotechnology and Precision Engineering, 2020 Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi +6 more
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Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs
Micromachines, 2020 The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high ...
Huaixin Guo, Tangsheng Chen, Shang Shi
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ChemElectroChem, 2022 High‐nickel ternary materials have attracted attention as advanced cathode materials for lithium‐ion batteries (LIBs) owing to their high energy density and low cost.
Qian Wu +3 more
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Advanced Science, 2021 A novel quinoidal thienoisoindigo (TII)‐containing small molecule family with dicyanomethylene end‐capping units and various alkyl chains is synthesized as n‐type organic small molecules for solution‐processable organic field effect transistors (OFETs ...
Arulmozhi Velusamy +13 more
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Frontiers in Physics, 2023 Entangled photons are important for testing foundations of quantum physics and are at the heart of quantum technology. Integrated photonics has overwhelming dominance in terms of density and performance, making it a promise route for scalable quantum ...
Bin Niu +15 more
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