Results 141 to 150 of about 3,436,516 (244)

Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors

open access: yesAdvanced Science, EarlyView.
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer   +19 more
wiley   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

open access: yesAdvanced Science
Chalcogenide ferroelectric Rashba semiconductors (FERSCs) offer a promising route to ultralow‐power spin–orbit devices, yet their integration into microelectronics has been hindered by the lack of high‐quality films grown using industry‐compatible ...
Jules Lagrave   +14 more
doaj   +1 more source

Interfacial Asymmetry and Surface Roughness Enhanced Topological‐Hall‐Like Transport in SRO/BTO/SRO Trilayers

open access: yesAdvanced Science, EarlyView.
Trilayer oxide architecture introduces interfacial asymmetry and surface roughness in SRO/BTO/SRO heterostructures, creating a locally modulated polar and magnetic landscape. This design enhances the topological‐Hall‐like response, achieving a broad 5–90 K stability window and a maximum ρTHE of 0.8 µΩ cm, demonstrating an effective route to amplify ...
Sagar E. Shirsath   +11 more
wiley   +1 more source

Mode‐Resolved Phonon Dynamics Under Chemical Pressure in SnTe Thermoelectrics

open access: yesAdvanced Science, EarlyView.
Chemical pressure reshapes low‐energy optical phonons in SnTe, altering their dispersion and scattering with heat‐carrying acoustic modes. Positive and negative pressure states modify phonon frequencies and lifetimes in distinct ways, revealing how mode‐selective lattice perturbations regulate acoustic–optical interactions and suppress lattice thermal ...
Zhihao Li   +7 more
wiley   +1 more source

Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture

open access: yesCommunications Materials
Merging III-N-technology and wurtzite ferroelectricity could enable novel devices with enhanced functionality, for instance, harsh environment ferroelectric non-volatile memories and neuromorphic components.
Georg Schönweger   +6 more
doaj   +1 more source

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

open access: yesAdvanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu   +13 more
wiley   +1 more source

Laser‐Induced Rashba Spin‐Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te

open access: yesAdvanced Science, EarlyView.
Femtosecond optical excitation generates two distinct effective spin–orbit torques in the multiferroic semiconductor (Ge,Mn)Te. Photoinduced holes drive coherent magnetization precession through a subpicosecond shift of the easy axis, while changes in ferroelectric sublattice displacements modify magnetic ordering via the Rashba interaction.
Zeynab Sadeghi   +10 more
wiley   +1 more source

Interfacial Polarization Dynamics of Nitrile Dipoles in Organic Synaptic Transistors for Acoustic Reservoir Computing

open access: yesAdvanced Science, EarlyView.
Interfacial nitrile dipoles unlock tunable memory in organic synaptic transistors through competing polarization and relaxation. Their finite time dynamics are directly harnessed for acoustic reservoir computing, delivering 97.17% spoken digit recognition, reliable speech emotion and snoring recognition, and an ultralow event energy of only 50 aJ ...
Yutian Liu   +13 more
wiley   +1 more source

Molecularly Engineered Nitrate Double Perovskites with Elevated Ferroelectric Phase Transition Temperature and Large Piezoelectric Response

open access: yesAdvanced Science, EarlyView.
This study reports molecularly engineered nitrate double perovskites based on systematic BI‐site cation substitution. This molecular engineering modulates local BI···NO3 interactions, nitrate connectivity, and collective physical responses, accompanied by structural conversion from mixed corner‐/face‐sharing structures to three‐dimensional corner ...
Le Ye   +12 more
wiley   +1 more source

Molecular Ferroelectric Catalysis

open access: yesCCS Chemistry
Jun-Chao Qi   +10 more
openaire   +1 more source

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