Results 111 to 120 of about 31,416 (277)

Additions to fused-fluoride lubricant coatings for reduction of low-temperature friction [PDF]

open access: yes
Additions to fused-fluoride lubricant coatings for reduction of low temperature ...
Olson, K. M., Sliney, H. E.
core   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

open access: yesAdvanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal   +3 more
wiley   +1 more source

Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film

open access: yes, 2015
Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter interactions. Here,
Funahashi, Kazuma   +7 more
core   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

A Graphene–Molybdenum Disulfide Heterojunction Phototransistor

open access: yesCrystals
Heterojunctions combining graphene with transition metal dichalcogenides (TMDCs) have garnered considerable interest in phototransistor research. Molybdenum disulfide (MoS2) can be well combined with graphene owing to its excellent and special bandgap ...
Chuyue Jing, Ze Deng, Haichao Cui
doaj   +1 more source

Evaluation of chromium oxide and molybdenum disulfide coatings in self-acting stops of an air-lubricated Rayleigh step thrust bearing [PDF]

open access: yes
Two coatings for a Rayleigh step thrust bearing were tested when coasting down and stopping under self-acting operation in air. The thrust bearing had an outside diameter of 8.9 cm (3.5 in.), an inside diameter of 5.4 cm (2.1 in.), and nine sectors.
Nemeth, Z. N.
core   +1 more source

Improved rolling element bearings provide low torque and small temperature rise in ultrahigh vacuum environment [PDF]

open access: yes, 1966
Rolling element bearing with stainless steel races and rolling elements and a porous bronze cage successfully operates in ultrahigh vacuum environments at a low torque and with small temperature rise.
Glenn, D. C.
core   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee   +9 more
wiley   +1 more source

Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

open access: yesnpj 2D Materials and Applications, 2017
Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite.
Chun-I Lu   +7 more
doaj   +1 more source

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