Results 121 to 130 of about 6,031 (213)

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra   +13 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

open access: yesAdvanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali   +3 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Thickness‐Tuned Berry Curvature in vdW Epitaxial Cr3Te4 Ultrathin Films

open access: yesAdvanced Electronic Materials, EarlyView.
An investigation of thickness‐modulated Berry curvature in stoichiometric, high‐quality van der Waals epitaxial Cr3Te4 films. Surface and interface Te(CrTe2)‐termination enables Fermi level shifting via thickness variation, modulating Berry curvature near the band crossing point, thereby establishing termination engineering (may called Terminonics) as ...
Minghui Gu   +6 more
wiley   +1 more source

Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma   +11 more
wiley   +1 more source

Degradation Mechanism of Phosphate‐Based Li‐NASICON Conductors in Alkaline Environment

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The presence of water in the cathode of a Li‐air battery shifts reactions to produce LiOH, creating a corrosive, alkaline environment. This study investigates the alkaline stability of the common Li‐NASICON solid‐state conductor chemistries through a systematic experimental study combined with computational modeling to understand the degradation ...
Benjamin X. Lam   +3 more
wiley   +1 more source

Stretchable Energy Storage with Eutectic Gallium Indium Alloy

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A highly stretchable liquid metal‐based electrode is developed via a one‐step process, retaining conductivity and capacitance after mechanical deformation up to 900% strain. The stretchable all‐solid‐state device provides a areal energy density of 43 µWh cm⁻2 after 150% strain.
Adit Gupta   +6 more
wiley   +1 more source

Fabrication of Composite Cathode for All‐Solid‐State Sodium Batteries

open access: yesAdvanced Energy Materials, EarlyView.
The design of composite cathodes for all‐solid‐state sodium batteries must address three critical challenges—interfacial side reactions, interfacial delamination, and highly tortuous transport pathways. This work outlines structural and interfacial strategies to optimize ion transport and mechanical stability, enabling durable, and high‐performance ...
Gaoming Sun   +6 more
wiley   +1 more source

From Materials to Systems: Challenges and Solutions for Fast‐Charge/Discharge Na‐Ion Batteries

open access: yesAdvanced Energy Materials, EarlyView.
This review systematically analyzes the key characteristics limiting the fast‐charge/discharge capability of Na‐ion batteries (SIBs) from a multi‐scale perspective encompassing electrode materials, the electrode‐electrolyte interface, and the system. Furthermore, it presents practical solution strategies for the fundamental issues arising at each scale,
Bonyoung Ku   +5 more
wiley   +1 more source

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