Results 101 to 110 of about 147,619 (289)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Precise Microstructural and Stoichiometric Control Advances Flexible Ag2Te Thin‐Film Thermoelectrics for Wearable Energy Harvesting

Advanced Materials, EarlyView.
Flexible Ag2Te thin films achieving a record‐high mobility of 4756 cm2 V−1 s−1 and a peak power factor of 18.5 µW cm−1 K−2 are developed via precise structural control. The assembled flexible devices demonstrate excellent mechanical stability and ultrafast voltage response, enabling precise thermal detection when integrated into a robotic gripper for ...
Yue‐Xing Chen, Xiao‐Lei Shi, Ning Chen, Dong Yang, Zhongzhao Zha, Hanwen Xu, Mohammad Nisar, Tianyi Cao, Boxuan Hu, Meng Li, Ziya Wang, Fu Li, Guangxing Liang, Jingting Luo, Zhuanghao Zheng, Zhi‐Gang Chen   +15 more
wiley   +1 more source

4-[(2-Hydroxybenzylidene)amino]-N-(5-methylisoxazol-3-yl)benzenesulfonamide: a monoclinic polymorph

Acta Crystallographica Section E, 2010
The title compound, C17H15N3O4S, is a monoclinic polymorph with space group P21/c of the previously reported triclinic form in Poverline{1} [Subashini et al. (2009). J. Chem. Crystallogr. 39, 112–116].
Packianathan Thomas Muthiah, Samuel Ebenezer   +1 more
doaj   +1 more source

Crystal structure of solid Oxygen at high pressure and low temperature

, 2001
Results of X-ray diffraction experiments on solid oxygen at low temperature and at pressures up to 10 GPa are presented.A careful sample preparation and annealing around 240 K allowed to obtain very good diffraction patterns in the orthorhombic delta ...
A.P. Hammersley, C.A. English, D. Schiferl, D. Schiferl, D.R. Ragan, E.M. Hörl, F.A Gorelli, F.A. Gorelli, Federico A. Gorelli, H. d’Amour, H.J. Jodl, H.K. Mao, J. Yen, Lorenzo Ulivi, M. Nicol, M. Santoro, Mario Santoro, Michael Hanfland, R. LeSar, R.A. Alikhanov, R.D. Etters, R.J. Meier, S. Desgreniers, S.W. Johnson, Y. Akahama   +24 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Tetrakis(2,3,5,6-tetrafluorobenzenethiolato-κS)(triphenylphosphane-κP)osmium(IV): a monoclinic polymorph

IUCrData, 2019
The structure of the title compound, [Os(C6HF4S)4{P(C6H5)3}], has been previously reported [Arroyo et al. (1994). J. Chem. Soc. Dalton Trans. pp. 1819–1824], in the space group P\overline{1}. We have now obtained a monoclinic polymorph for this compound,
Paulina Zeleny, Maribel Arroyo, Lidia Meléndez, Sylvain Bernès   +3 more
doaj   +1 more source

Evidence for $M_B$ and $M_C$ phases in the morphotropic phase boundary region of $(1-x)[Pb(Mg_{1/3}Nb_{2/3})O_3]-xPbTiO_3$ : A Rietveld study

, 2002
We present here the results of the room temperature dielectric constant measurements and Rietveld analysis of the powder x-ray diffraction data on $(1-x)[Pb(Mg_{1/3}Nb_{2/3})O_3]-xPbTiO_3$(PMN-$x$PT) in the composition range $0.20 \leq x \leq 0.45$ to ...
A.K. Singh, A.M. Glazer, Akhilesh Kumar Singh, B. Noheda, B. Noheda, B. Noheda, B. Noheda, D. La-Orauttapong, D. Pandey, D. Vanderbilt, D. Viehland, D.L. Corker, D.M. Hatch, Dhananjai Pandey, G. Xu, H. Fu, H.C. Wang, H.D. Megaw, I.A. Sergienko, J. Kelly, J.M. Kiat, K. Kakegawa, K. Ohwada, L. Bellaiche, L. Bellaiche, M.K. Derbin, N. Lampis, O. Bouquin, P.W. Stephens, R. Guo, R. Ranjan, Ragini, Ragini, S.-E. Park, S.K. Mishra, S.K. Mishra, S.K. Mishra, S.L. Swartz, S.L. Swartz, Y. Lu, Z.-G. Ye   +40 more
core   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Monoclinic modification of aquadi-n-butylbis(pyrazine-2-carboxylato-κ2N1,O)tin(IV)

Acta Crystallographica Section E, 2010
The asymmetric unit of the title organotin(IV) compound, [Sn(C4H9)2(C5H3N2O2)2(H2O)], contains one-and-a-half molecules. The half-molecule is completed by crystallographic twofold symmetry, with its Sn and water O atoms lying on the rotation axis.
Seik Weng Ng
doaj   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source