Results 131 to 140 of about 148,069 (251)
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Nature of point defects in monolayer MoS2 and the MoS2/(111)Au heterojunction [PDF]
Deposition of MoS2 on (111)-Au alters the electronic properties of MoS2. In this study, we investigate the free-standing MoS2 monolayer and the MoS2~\(111)-Au heterostructure, with and without strain, as well as defects of interest in memristive and ...
Wang, Wennie, Anvari, Roozbeh
core
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Modulating the edge sites of molybdenum disulfide significantly boosts hydrogen production. By depositing Ru to form an edge‐coordinated solid solution, we accelerate water dissociation and shift the hydrogen evolution reaction pathway to Volmer–Tafel.
Jinsong Zhou +12 more
wiley +2 more sources
Hydrogen‐Induced Electronic Modulation at MoS2/SiO2 Interfaces
Two‐dimensional (2D) transition metal dichalcogenides (TMDs) are being explored in electronic and optoelectronic applications, including electrochemical random‐access memories (ECRAMs).
Vasileios Fotopoulos +6 more
doaj +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler +4 more
wiley +1 more source
Electrically Tuning Electromagnetic Wave Shielding in Phase Engineered 1T/2H‐MoS2‐Based Devices
Sub‐millimeter‐thick phase‐engineered 1T/2H‐MoS2 structures enable electrically tunable electromagnetic interference shielding through active modulation of microwave absorption and reflection. The coexistence of metallic and semiconducting phases, combined with a PVA/KOH gel electrolyte, provides dynamic control over charge transport and interfacial ...
Mustafa Akyol +3 more
wiley +1 more source
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park +19 more
wiley +1 more source
This review looks at the different experimental techniques that measure spatiotemporal charge carrier dynamics. This information is viewed in the context of particulate photocatalysts, outlining the insights these techniques provide and how they advance our understanding.
Sutripto Khasnabis, Robert Godin
wiley +1 more source

