Results 151 to 160 of about 660 (215)
Recent advances in carbon‐based anodes for alkali metal‐ion batteries are critically reviewed, with emphasis on biphenylene and other emerging carbon allotropes. Biphenylene exhibits exceptional theoretical electrochemical properties beyond conventional graphite, highlighting its strong potential as a next‐generation anode material once scalable ...
Adewale Hammed Pasanaje, Nirpendra Singh
wiley +1 more source
Borophene‐based sensing platforms: Pioneering ultrasensitive detection
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley +1 more source
This review summarizes MXene synthesis and flexible electrode fabrication for FESDs, highlighting their potential owing to high conductivity and flexibility, and outlines future research directions. Abstract The rapid development of wearable and portable electronics has created demand for flexible energy storage systems (FESDs) that not only exhibit ...
Nanxi Miao +10 more
wiley +1 more source
Bio‐inspired vision: From principle, material architectures to system‐level integration
This review introduces the development and mechanism of electronic and ionic bio‐inspired vision devices respectively. Then, it explores the impact of structure on bio‐inspired visual performance from the scale of intrinsic materials and device. Finally, it concludes that only by combining advanced software and technology can more complex vision ...
Zewan Lin +4 more
wiley +1 more source
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li +7 more
wiley +1 more source
Overcoming spectral limits of perovskite photodetectors for the infrared region
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li +4 more
wiley +1 more source
Graphical overview of the preparation, mechanical performance and microstructural characterization of low‐content Ti3C2Tx MXene‐reinforced BMC composites. ABSTRACT Bulk molding compound (BMC) composites are widely used in engineering applications; however, improving their mechanical response through low‐content nanoscale modification remains ...
Bilge Yılmaz, Cemal Meran, Cahit Bilgi
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This paper presents a comprehensive overview of recent advancements in Joule‐heating synthesis of photo and electrocatalysts, emphasizing its benefits and applications. The objective is to offer an effective strategy for enhancing the diversity and performance of catalytic materials.
Jiaqi Li +4 more
wiley +1 more source
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source

