Results 181 to 190 of about 22,531 (261)

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Recrystallization-Driven Formation of Single-Crystalline MoS₂ by Metal-Organic Chemical Vapor Epitaxy. [PDF]

Small Methods
Kandybka I, Kumar P, Silva HM, Groven B, Mehta AN, Shi Y, Smets Q, Schram T, Singh DP, Banerjee S, Lockhart de la Rosa CJ, Kar GS, Morin P, Delabie A.   +13 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Computational Simulation of Ammonia Borane Adsorption and Activation on Transition Metal-Doped Two-Dimensional MoS₂. [PDF]

Chemphyschem
Huo J, Tang Y, Sun X, He C.
europepmc   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Tailoring Interfacial Chemistry Using S═O Bonds and Sulfur Vacancies of MoS₂-PEO for Stable Zinc Anode. [PDF]

Small
Qie Y, He H, Zhang Z, Wang G, Xu G.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Stick-Slip Delamination of Monolayer MoS₂ from SiO₂ under Ambient Humidity. [PDF]

J Phys Chem C Nanomater Interfaces
Haartsen S, Bampoulis P.
europepmc   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source