Results 201 to 210 of about 43,546 (313)

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

open access: yesAdvanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong   +10 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen   +8 more
wiley   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami   +7 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

Nonuniform Chemical Passivation Dynamics in Monolayer MoS<sub>2</sub> from Real-Time Photoluminescence Imaging. [PDF]

open access: yesJ Phys Chem Lett
Lim J   +7 more
europepmc   +1 more source

بررسی خواص ترموالکتریکی ساختارهای مبتنی بر دی‌کالکوژن‌های دو بعدی MoS2 /MoS2 ,WTe2 /WTe2 ,MoS2/WTe2

open access: yesاپتوالکترونیک
در این مطالعه خواص ترموالکتریکی سیستم مبتنی بر مولیبدن دی‌سولفاید و تنگستن دی‌تلوراید را در سه ترکیب با دو نانونوار یکسان مولیبدن دی‌سولفاید و تنگستن دی‌تلوراید را در لایه بالا و پایین و همچنین ساختاری با دو لایه متفاوت یکی مولیبدن دی‌سولفاید و دیگری تنگستن دی‌تلوراید بررسی می‌کنیم. این خواص شامل ضریب رسانش الکتریکی (G)، رسانندگی گرمایی (κe)، ضریب سیبک
openaire   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

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