Results 211 to 220 of about 43,546 (313)

Epitaxial n-ZnO/MoS₂/p-GaN Heterostructure Light-Emitting Diodes. [PDF]

Nano Lett
Rahmatulloh I, Dalayoan DJC, Ali A, Shin S, Nguyen ATD, Kwon T, Behera S, Lee J, Kim H, Jeong HY, Namgung S, Yi GC, Chung K.   +12 more
europepmc   +1 more source

Photocatalytic water splitting on mulitilayer-MoS2/single-layer-MoS2

Photocatalytic water splitting on mulitilayer-MoS2/single-layer-MoS2
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Phase-engineered MoS₂ nanosheets/probiotic vesicles hydrogel for diabetic wound healing via dynamic ROS modulation. [PDF]

J Nanobiotechnology
Zhang YS, Ke S, Zhang J, Luo M, Li BH, Liu XX, Lu ZJ, Liu RF, Zeng XT, Zhang LL.   +9 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Reconfigurable second-harmonic generation via plasmonic nanoslits counteracting strain-induced suppression in monolayer MoS₂. [PDF]

Sci Adv
Sharma S, Behera S, Son BH, Ji G, Park D, Alagurasu A, Mahsa Haddadi Moghaddam, Kim DS, Namgung S, Ahn YH, Park HR.   +10 more
europepmc   +1 more source

2D Materials Empowered Radar Absorbing Materials: A Review

Advanced Electronic Materials, EarlyView.
Recent progress in 2D materials empowered radar absorbing materials (RAMs) is reviewed, highlighting four key structural design strategies that enhance electromagnetic wave absorption. Porous structures, heterogeneous interfaces, printed metamaterials, and tunable metasurfaces are compared in terms of their governing physics, fabrication complexity ...
Yujie Zhong, Shuncong Zhong, Yi Huang, Shan‐Tung Tu, Minghong Wu   +4 more
wiley   +1 more source

Trimetallic Defects on MoS₂ Monolayers toward the Adsorption of Diatomic Pollutants. [PDF]

ACS Omega
Gutierrez-Rodriguez J, Medina DI, Rangel-Cortes E, Miralrio A.   +3 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source