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Physical chemistry chemical physics : PCCP
Defects, which are an unavoidable component of the material preparation process, can have a significant impact on the properties of two-dimensional devices. In this work, we investigated theoretically the effects of different types and positions of point defects on band alignment and transport properties of metallic 1T-phase MoS2/semiconducting 2H ...
Yifei, Cong +5 more
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Defects, which are an unavoidable component of the material preparation process, can have a significant impact on the properties of two-dimensional devices. In this work, we investigated theoretically the effects of different types and positions of point defects on band alignment and transport properties of metallic 1T-phase MoS2/semiconducting 2H ...
Yifei, Cong +5 more
openaire +1 more source
Ultrastable In‐Plane 1T–2H MoS2 Heterostructures for Enhanced Hydrogen Evolution Reaction
Advanced Energy Materials, 2018Zhiguo Du, Shubin Yang
exaly
From Bulk to Monolayer MoS2: Evolution of Raman Scattering
Advanced Functional Materials, 2012Bk Tay, Aurélien Olivier
exaly
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Advanced Materials, 2015Weida Hu, Hong Shen, Wei Lu
exaly
Supercapacitor Electrodes Obtained by Directly Bonding 2D MoS2 on Reduced Graphene Oxide
Advanced Energy Materials, 2014Cleocir Dalmaschio, Ernesto Pereira
exaly
Advances in MoS2-Based Field Effect Transistors (FETs)
Nano-Micro Letters, 2015Eric Ashalley, Xin Tong, Handong Li
exaly
Large-Area Atomically Thin MoS2 Nanosheets Prepared Using Electrochemical Exfoliation
ACS Nano, 2014Na Liu, Cheol Jin Lee, Sunkook Kim
exaly
Highly Enhanced Gas Adsorption Properties in Vertically Aligned MoS2 Layers
ACS Nano, 2015Sooyeon Cho, Youhan Lee, Jihan Kim
exaly