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On the Role of Chlorine in the Passivation of MOS Structures
Physica Status Solidi (a), 1979Chlorine is introduced into SiO2 films by means of oxidation of silicon slices in presence of vapour HCl, and by ion implantation method. Samples are contaminated with sodium and then BT-stressed. Concentration profiles of sodium were plotted vs. depth in oxide films by means of NAA method.
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Analysis of Gold-Doped MOS Structures
physica status solidi (a), 1985A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of the minimum capacitance in gold-doped MOS structures is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: the gold atoms with deep energy levels, Ec −0.55 eV ...
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Complementary MOS-bipolar structure
IEEE Transactions on Electron Devices, 1968Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
H.C. Lin, R.R. Iyer, C.T. Ho
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Physical limitations of MOS structures
Solid-State Electronics, 1969The physical model of the MOS structure is re-assessed with particular reference to its usefulness in the understanding of the behaviour of MOSTs near the threshold or transition region and under high surface field and channel field conditions of operation.
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A MOS structure temperature characterization
Materials Science and Engineering: B, 1997Abstract As is known, during the realization of semiconductor made components or devices, defects appear which lead to electronic trapped states. Their energies are all located in the forbidden band called the band gap. These states are called surface states and hinder the good functioning of such components or devices.
A. Bouzidi +5 more
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Tunneling in thin MOS structures
Journal of Vacuum Science and Technology, 1974Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22–40 Å have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with
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The Effects of Hydrogen on MOS Structures
1984The threshold voltage of Pd/SiO2/Si devices alters markedly on exposure to hydrogen, making them useful gas detectors. Initially we have observed response ~ 5mV for 100 ppm partial pressure of H2 followed by a “forming” process during which the response rises to 500 mV for the same pressure.
M. Evans +3 more
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The Structure of Mo/Ta Superlattices
1988We grew superlattices of Mo and Ta on sapphire substrates using magnetically enhanced de triode sputtering, where a rotating substrate table alternately passes over the targets to create multilayers. Microprocessor control of the sputtering process allowed us to keep layer thicknesses constant to ±0.3%.
J. L. Makous, C. M. Falco
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Ion Instabilities in MOS Structures
12th International Reliability Physics Symposium, 1974Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices.
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A Data Structure for MOS Circuits
20th Design Automation Conference Proceedings, 1983Chi-Yuan Lo, Hao N. Nham, Ajoy K. Bose
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