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RAID-Dataset: human responses to affine image distortions and Gaussian noise. [PDF]

Sci Data
Daudén-Oliver P, Agost-Beltran D, Sansano-Sansano E, Montoliu R, Laparra V, Malo J, Martínez-Garcia M.   +6 more
europepmc   +1 more source

Piezoelectric Heterojunction-driven Biomedical Revolution: From Construction Principles to Diagnostic and Therapeutic Applications. [PDF]

Theranostics
Chen Z, Zhang W, Qu X, Zhang Y.
europepmc   +1 more source

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Structure of hexacarbonylbis(pentamethylcyclopentadienyl)dimolybdenum(Mo–Mo)

Acta Crystallographica Section C Crystal Structure Communications, 1988
[Mo 2 (C 5 Me 5 ) 2 (CO) 6 ] cristallise dans le systeme monoclinique avec le groupe d'espace P2 1 /n.
W. Clegg, N. A. Compton, R. J. Errington, N. C. Norman   +3 more
openaire   +1 more source

Synthesis and structure of hexabenzyl-dimolybdenum (MoMo)

Polyhedron, 1986
Abstract The homoleptic benzyl Mo2(CH2Ph)6 has been obtained by reaction of either MoCl4(thf)2 or Mo2(OPri)6 with Mg(CH2Ph)2. The dark-red, sparingly soluble complex has been characterized by 1H and 13C NMR as well as by a solid-state structure analysis.
Sharon M. Beshouri, Ian P. Rothwell, Kirsten Folting, John C. Huffman, William E. Streib   +4 more
openaire   +1 more source

Thermally stimulated ionic conduction in MOS (MoSiO2Si) structures

Journal of Electrostatics, 1977
Abstract Results on thin films of silicon dioxide made by a low temperature process (oxidation of silane SiH4) are presented. We used a MOS structure MoSiO2Si for our investigations. Both capacitance-voltage and thermostimulated current measurements were made. A high ionic contamination (Na+) of 8 × 10−2 has been found.
Manifacier, J.-C., Parot, P., Fillard, J.-P.   +2 more
openaire   +1 more source

Hydrogen sensitive MOS structures

1975 International Electron Devices Meeting, 1975
It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given.
I. Lundstrom, M.S. Shivaraman, C. Svensson   +2 more
openaire   +1 more source

Instabilities of MOS Structure

Japanese Journal of Applied Physics, 1967
The surface charge density of MOS structure is strongly affected by the bias and temperature (BT) treatment. Ordinary and “clean” MOS diodes are prepared by using the (100) and (111) planes. The results on the “clean” diodes during the BT treatment at high electric field of both polarities show the presence of an electrochemical reaction.
Yoshio Miura, Yasuo Matukura
openaire   +1 more source