Results 241 to 250 of about 266,678 (292)
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Complementary MOS-bipolar structure
IEEE Transactions on Electron Devices, 1968Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
H.C. Lin, R.R. Iyer, C.T. Ho
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Phonons in (001) Mo/W/Mo and W/Mo/W layer structures
Physica Scripta, 1995We have calculated the frequencies and local mode densities for phonons in (001) Mo/W/Mo and W/Mo/W sandwiches by means of the surface Green function matching method. A force constant model including two-body and three-body interactions up to third neighbours, which gives a reasonably accurate description of the bulk dispersion relations, has been ...
L Fernández-Alvarez, V R Velasco
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Interfacial reaction in mos structures
Vacuum, 1976The kinetics of the reduction of SiO2 in Au/SiO2/Si structures has been studied as a function of time, temperature, and annealing environment. Reduction of the oxide seems to be dependent on the presence of Au–Si eutectic as regions free of Au remained intact and samples of Au on bulk glass showed no reactions.
E. I. Alessandrini +2 more
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A MOS structure temperature characterization
Materials Science and Engineering: B, 1997Abstract As is known, during the realization of semiconductor made components or devices, defects appear which lead to electronic trapped states. Their energies are all located in the forbidden band called the band gap. These states are called surface states and hinder the good functioning of such components or devices.
A. Bouzidi +5 more
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Analysis of Gold-Doped MOS Structures
physica status solidi (a), 1985A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of the minimum capacitance in gold-doped MOS structures is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: the gold atoms with deep energy levels, Ec −0.55 eV ...
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2.11 Hydrogen sensitive MOS structures
Vacuum, 1977Abstract It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given.
I. Lundstrom +2 more
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Surface reactions on MOS structures
Journal of Applied Physics, 1974The morphology of surface reactions for Au/SiO2/Si structures has been studied as a function of environment. It was found that the reaction between thin gold film dots and thermally oxidized Si was strongly influenced by the partial pressure of oxygen.
E. I. Alessandrini +2 more
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Ionic current in MOS structures
Annales des Télécommunications, 2004A new approach of determining dynamic ionic current-voltage characteristic that is due to ion transport phenomenon in the oxide is presented. In this approach, the formulation of I–V characteristics ofmos device can be achieved through the use of the theoretical model of mobile ion distribution in oxides.
Hamid Bentarzi +2 more
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2011
The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are ...
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The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are ...
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Tunneling in thin MOS structures
Journal of Vacuum Science and Technology, 1974Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22–40 Å have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with
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