Results 251 to 260 of about 266,678 (292)

Instantaneous characteristics of MOS structures

Journal of Physics E: Scientific Instruments, 1977
A simple, rapid experimental method is proposed for obtaining the parameters of each MOS device from the profile of the derived curve dCn/dVg of the capacitance-voltage characteristic, which is closely correlated to the level of disorder existing in the I-S interfacial region.
B Balland, J J Marchand, P Pinard
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Physical limitations of MOS structures

Microelectronics Reliability, 1969
The physical model of the MOS structure is re-assessed with particular reference to its usefulness in the understanding of the behaviour of MOSTs near the threshold or transition region and under high surface field and channel field conditions of operation.
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Structure of pentacarbonyl(cycloheptatrienyl)(cyclopentadienyl)dimolybdenum(Mo–Mo)

Acta Crystallographica Section C Crystal Structure Communications, 1988
[Mo 2 (C 5 H 5 )(C 7 H 7 )(CO) 5 ] cristallise dans P2 1 /c avec affinement jusqu'a 0,0222. La molecule consiste en un fragment Mo(η-C 7 H 7 )(CO 2 ) et un fragment Mo(η-C 5 H 5 )(CO) 3 , les deux etant lies par liaison metal ...
R. L. Beddoes, A. Ricalton, M. W. Whiteley   +2 more
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Organoimido complexes of Mo(IV), Mo(V) and Mo(VI): preparation, structure and reactivity

Polyhedron, 1986
Abstract Two series of p-tolylimido (Ntol) complexes of Mo(VI), Mo(V) and Mo(IV) are described. One series, containing diethyldithiocarbamate ligands, is formed via oxygen atom abstraction from Mo(VI)O(Ntol)(S2CNEt2)2 using tertiary phosphines which affords the oxo-bridged Mo(V) dimer [Mo(Ntol)(S2CNEt2)2]2O and the Mo(IV) species Mo(Ntol)(S2CNEt2)2 ...
C.Y. Chou, D.D. Devore, S.C. Huckett, E.A. Maatta, J.C. Huffman, F. Takusagawa   +5 more
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Electro luminescence from MOS structures

2014
Electro luminescence from MOS structures is investigated. Broadband visible light emission is observed from Au/SiO2/n-type Si MOS tunnel junctions. Their spectra show the same peak position for both polarities of the bias voltage but the detailed shape is different due to the involvement of different surface plasmon modes.
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Characterization of MOS Structures with Buried Layers

Physica Status Solidi (a), 1978
After boron implantation into n-type silicon the shapes of the MOS C–V curves differ considerably from those of non-implanted samples. A general equivalent network is presented. Beside the p-n junctions other components due to lateral current flow are included in this network. Admittance and crosstalk experiments verify the proposed model.
W. R. Fahrner, E. Klausmann
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Electroluminescence of silicon nanocrystals in MOS structures

Applied Physics A, 2002
We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (> 1000 °C) to induce the separation of the Si and the SiO2 phases with
G Franzò, A Irrera, E Ceretta Moreira, M Miritello, F Iacona, D Sanfilippo, G Di Stefano, PG Fallica, F Priolo   +8 more
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Electronic structure of metallic superlattices: Mo/V

Physical Review B, 1992
The electronic structure for a metallic superlattice system, Mo/V, has been calculated using the linear muffin-tin orbital method in the atomic-sphere approximation (ASA). Total energies have been calculated in the local-density approximation (LDA). Emphasis has been given to the electronic-density variation in these materials in order to understand ...
, Papadia, , Karlsson, , Nilsson, , Jarlborg   +3 more
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Structural changes in the Mo(100) reconstruction

Physical Review Letters, 1993
The clean Mo(100) surface reconstructs at low temperature forming a commensurate [ital c](7 [radical]2 [times] [radical]2 )[ital R]45[degree] displacement wave. LEED studies over the range 10 to 300 K reveal a change in the harmonic content of this wave at intermediate temperatures corresponding to a sharpening of antiphase domain walls as [ital T] is ...
, Daley, , Felter, , Hildner, , Estrup
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Ion Instabilities in MOS Structures

12th International Reliability Physics Symposium, 1974
Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices.
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