Results 21 to 30 of about 6,912,402 (250)

Low-Temperature Synthesis Strategy for MoS₂ Slabs Supported on TiO₂(110)

Surfaces, 2020
MoS2 supported on oxides like TiO2 has a broad range of applications. The atomic structure of this system is therefore very useful to study. Previous research work in this area has made use of high-temperature synthesis methods, while the preparation of ...
Mahesh K. Prabhu, Irene M. N. Groot
doaj   +1 more source

MOS CCDs for the wide field imager on the XEUS spacecraft [PDF]

, 2005
In recent years the XEUS mission concept has evolved and has been the subject of several industrial studies. The mission concept has now matured to the point that it could be proposed for a Phase A study and subsequent flight programme.
Hutchinson, I, C Castelli, D. Burt, R. Ambrosi, Ambrosi, RM, A. D. Holland, P. Pool, M. French, Holland, AD, Burt, DJ, Pool, P, D. R. Smith, I. Hutchinson, French, M, J. Calafell, Castelli, C, Smith, DR, Calafell, J   +17 more
core   +1 more source

Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage

Micro & Nano Letters, 2022
In this work, a novel AlGaN/GaN lateral field‐effect rectifier (L‐FER) with ultralow turn‐on voltage (VT) and low reverse leakage current (IR) is proposed and verified by technology computer aided design (TCAD) Sentaurus.
Yijun Shi, Hongyue Wang, Bin Zhou, Yiqiang Chen, Yun Huang   +4 more
doaj   +1 more source

Interlayer-Expanded MoS₂ Enabled by Sandwiched Monolayer Carbon for High Performance Potassium Storage

Molecules, 2023
Potassium-ion batteries (PIBs) have aroused a large amount of interest recently due to the plentiful potassium resource, which may show cost benefits over lithium-ion batteries (LIBs).
Yuting Zhang, Lin Zhu, Hongqiang Xu, Qian Wu, Haojie Duan, Boshi Chen, Haiyong He   +6 more
doaj   +1 more source

First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide

Nanomaterials, 2021
By adopting the first-principles plane wave pseudopotential method based on density functional theory, the electronic structure properties of single-layer MoS2 (molybdenum disulfide) crystals under biaxial strain are studied.
Chen Chong, Hongxia Liu, Shulong Wang, Kun Yang   +3 more
doaj   +1 more source

Translation, Adaption, and Psychometric Testing of the Myanmar Version of the Medical Outcomes Study Social Support Survey for People Living With HIV/AIDS

Frontiers in Psychology, 2021
Introduction: Valid and reliable instruments are crucial for measuring perceived social support among people living with HIV (PLHIV). We aimed to investigate the psychometric properties of the English version of the 19-item Medical Outcomes Study Social ...
Feifei Huang, Feifei Huang, Wei-Ti Chen, Sai Htun Lin, Min San Tun, Thet Wai Nwe, Yin Thet Nu Oo, Htun Nyunt Oo   +7 more
doaj   +1 more source

Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

Journal of Electronic Science and Technology, 2023
A silicon (Si)/silicon carbide (4H–SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations.
Hang Chen, You-Run Zhang
doaj   +1 more source

Ovarian Sex Cord Stromal Tumors in Children and Adolescents—The European Standard Clinical Practice Recommendations

Pediatric Blood &Cancer, EarlyView.
ABSTRACT As part of the European Cooperative Study Group for Paediatric Rare Tumours initiative, we developed standard clinical practice guidelines for ovarian sex cord stromal tumors, based on comprehensive national and international cohort analyses, literature review, and a final expert consensus conference.
Dominik T. Schneider, Kris‐Ann Schultz, Nora Schnitzler, Michael Abele, Tal Ben‐Ami, Ewa Bien, Gianni Bisogno, Ines B. Brecht, Maja Cesen, Andrea Ferrari, Michaela Kuhlen, Malgorzata A. Krawczyk, Ricardo Lopez‐Almaraz, Yves Reguerre, Calogero Virgone, Daniel Orbach   +15 more
wiley   +1 more source

Modelo do descasamento (Mismatch) entre transistores MOS: [tese] [PDF]

, 2008
Tese (Doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaDiversos modelos teóricos para o descasamento entre dispositivos na tecnologia MOS foram propostos desde a década de '80, sendo
Klimach, Hamilton
core  

THE ELECTRICAL IMPEDANCE OF A METAL-SILICON STRUCTURE WITH A THIN SiO2 LAYER

Електроніка та інформаційні технології
Background. Silicon-based Metal-Oxide-Semiconductor (MOS) structures with an SiO2 dielectric layer are widely used in various modern electronic devices.
Dmytro Slobodzyan, Markiyan Kushlyk, Yaroslav Shpotyuk, Roman Lys, Andriy Luchechko   +4 more
doaj   +1 more source