Results 261 to 270 of about 1,209,275 (350)

Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing

open access: yesAdvanced Functional Materials, EarlyView.
In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee   +12 more
wiley   +1 more source

Baclofen, a GABAb receptor agonist, impairs motor learning in healthy people and changes inhibitory dynamics in motor areas. [PDF]

open access: yesImaging Neurosci (Camb)
Grigoras IF   +8 more
europepmc   +1 more source

Naturally Derived Donor‐π‐Acceptor Compounds for Efficient Long‐Wavelength LEDs/Sunlight‐Induced Polymerization and High‐Precision Multiple 3D Printing

open access: yesAdvanced Functional Materials, EarlyView.
Two novel donor–π–acceptor photoinitiators enable ultrafast long‐wavelength photopolymerization under blue/green LEDs and sunlight. Effective at low intensities and concentrations, they overcome slow kinetics and permit rapid 3D printing via DLW, DLP, and LCD methods.
Ji Feng   +9 more
wiley   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

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