Results 151 to 160 of about 834,256 (322)
Electrochemical Nitrate Reduction Reaction to Ammonia at Industrial‐Level Current Densities
This review starts from the mechanism and theoretical basis of electrochemical nitrate reduction reaction (NO3−RR), and systematically summarizes and discusses the design strategies of industrial‐level current density catalysts. In addition, the progress of industrial‐level NO3−RR‐based electrolyzers, including flow reactor and membrane electrode ...
Zhijie Cui +4 more
wiley +1 more source
This review comprehensively outlines how Ti3C2Tx MXene transforms carbon fiber from a structural component into a multifunctional platform. We systematically detail cutting‐edge modification strategies and showcase exceptional performance in EMI shielding, energy storage, smart sensing, and beyond.
Hongshuo Cao +6 more
wiley +1 more source
A Commentary on "Flexion K-Line Status Predicts Surgical Strategy in Multilevel Cervical Ossification of the Posterior Longitudinal Ligament: A Multicenter Comparison of Laminoplasty and Laminectomy With Fusion". [PDF]
Kanda Y.
europepmc +2 more sources
This study pioneers an aggregation‐induced resonance energy transfer mechanism by synergistically integrating aggregation‐induced emission (AIE), resonance energy transfer (RET), and thermally activated delayed fluorescence (TADF) within co‐reactant conjugated polymers to develop self‐enhanced ECL emitters, which achieves an ECL efficiency up to 92.6 ...
Chao Wang +6 more
wiley +1 more source
Multilevel converters-a new breed of power converters
J. Lai, F. Peng
semanticscholar +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
ReRAM/CMOS Array Integration and Characterization via Design of Experiments
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen +7 more
wiley +1 more source
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source

